Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy

Soo Hyon Phark; Hogyoung Kim; Keun Man Song; Phil Geun Kang; Heung Soo Shin; Dong Wook Kim

doi:10.1166/jnn.2011.3396

Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy

Soo Hyon Phark, Hogyoung Kim, Keun Man Song, Phil Geun Kang, Heung Soo Shin, Dong Wook Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

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Abstract

We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current-voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions.

Original language	English
Pages (from-to)	1413-1416
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	11
Issue number	2
DOIs	https://doi.org/10.1166/jnn.2011.3396
State	Published - Feb 2011

Keywords

Conductive atomic force microscopy
GaN
Schottky junction

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10.1166/jnn.2011.3396

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abstract = "We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current-voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions.",

keywords = "Conductive atomic force microscopy, GaN, Schottky junction",

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AU - Shin, Heung Soo

AU - Kim, Dong Wook

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KW - Conductive atomic force microscopy

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Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy

Abstract

Keywords

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