Channel length independent subthreshold characteristics in submicron MOSFET's

H. S. Shin, C. Lee, S. W. Hwang, B. G. Park, Y. J. Park, H. S. Min

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


This letter reports an anomalous subthreshold characteristic of MOSFET for the first time. It is observed that the subthreshold characteristic does not change as the channel length decreases. The cause of channel length independent subthreshold characteristics is identified as the localized pileup of channel dopants near the source and drain ends of the channel. The low surface potential of this pileup region limits the subthreshold current of MOSFET. As a result, the ratio of on-current to off-current for this MOSFET increases as the channel length is reduced, which is an important parameter for low-voltage operation. It is found that a MOSFET with channel length independent subthreshold characteristic is more suitable for low-voltage operation.

Original languageEnglish
Pages (from-to)137-139
Number of pages3
JournalIEEE Electron Device Letters
Issue number4
StatePublished - Apr 1998


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