The influence of boron atoms on self-intersitial clustering in Si was investigated using density functional theory and kinetic simulations. The first principles calculations showed the reduction of boron and intersitial interaction with the number of intersitials incorporated, leading to boron liberation. A comparision of experiments was found to support the boron liberation.
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 4 Aug 2003|