Carrier lifetime engineering for floating-body cell memory

Sungho Kim; Sung Jin Choi; Dong Il Moon; Yang Kyu Choi

doi:10.1109/TED.2011.2176944

Carrier lifetime engineering for floating-body cell memory

Sungho Kim, Sung Jin Choi, Dong Il Moon, Yang Kyu Choi

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

A novel bias scheme is demonstrated for performance improvement of floating-body cell memory, particularly retention time. Its basic mechanism is based on carrier lifetime engineering, which takes advantage of generation lifetime that is longer than recombination lifetime. In addition, the proposed scheme is suitable for low-power operation; a high drain bias is unnecessary to generate excess carriers, which allows reliable endurance of up to 10 ¹² switching instances at 85 ^̂{C}.

Original language	English
Article number	6108357
Pages (from-to)	367-373
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	2
DOIs	https://doi.org/10.1109/TED.2011.2176944
State	Published - Feb 2012

Keywords

1T-DRAM
Carrier lifetime
double gate
finFET
floating-body cell (FBC)
silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET)

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10.1109/TED.2011.2176944

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abstract = "A novel bias scheme is demonstrated for performance improvement of floating-body cell memory, particularly retention time. Its basic mechanism is based on carrier lifetime engineering, which takes advantage of generation lifetime that is longer than recombination lifetime. In addition, the proposed scheme is suitable for low-power operation; a high drain bias is unnecessary to generate excess carriers, which allows reliable endurance of up to 10 12 switching instances at 85 {\^^}{C}.",

keywords = "1T-DRAM, Carrier lifetime, double gate, finFET, floating-body cell (FBC), silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET)",

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KW - 1T-DRAM

KW - Carrier lifetime

KW - double gate

KW - finFET

KW - floating-body cell (FBC)

KW - silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET)

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Carrier lifetime engineering for floating-body cell memory

Abstract

Keywords

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