Carbon nanotube field effect transistors with suspended graphene gates

Johannes Svensson; Niklas Lindahl; Hoyeol Yun; Miri Seo; Daniel Midtvedt; Yury Tarakanov; Niclas Lindvall; Oleg Nerushev; Jari Kinaret; Sangwook Lee; Eleanor E.B. Campbell

doi:10.1021/nl201280q

Carbon nanotube field effect transistors with suspended graphene gates

Johannes Svensson, Niklas Lindahl, Hoyeol Yun, Miri Seo, Daniel Midtvedt, Yury Tarakanov, Niclas Lindvall, Oleg Nerushev, Jari Kinaret, Sangwook Lee, Eleanor E.B. Campbell

Department of Physics

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental measurements and numerical simulations. The mechanical motion of the graphene gate is confirmed by using atomic force microscopy to directly measure the electrostatic deflection. The device geometry investigated here can also provide a sensitive measurement technique for detecting high-frequency motion of suspended membranes as required, e.g., for mass sensing.

Original language	English
Pages (from-to)	3569-3575
Number of pages	7
Journal	Nano Letters
Volume	11
Issue number	9
DOIs	https://doi.org/10.1021/nl201280q
State	Published - 14 Sep 2011

Keywords

Carbon nanotube
field effect transistor
graphene
movable gate electrode

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10.1021/nl201280q

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title = "Carbon nanotube field effect transistors with suspended graphene gates",

abstract = "Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental measurements and numerical simulations. The mechanical motion of the graphene gate is confirmed by using atomic force microscopy to directly measure the electrostatic deflection. The device geometry investigated here can also provide a sensitive measurement technique for detecting high-frequency motion of suspended membranes as required, e.g., for mass sensing.",

keywords = "Carbon nanotube, field effect transistor, graphene, movable gate electrode",

author = "Johannes Svensson and Niklas Lindahl and Hoyeol Yun and Miri Seo and Daniel Midtvedt and Yury Tarakanov and Niclas Lindvall and Oleg Nerushev and Jari Kinaret and Sangwook Lee and Campbell, {Eleanor E.B.}",

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T1 - Carbon nanotube field effect transistors with suspended graphene gates

AU - Svensson, Johannes

AU - Lindahl, Niklas

AU - Yun, Hoyeol

AU - Seo, Miri

AU - Midtvedt, Daniel

AU - Tarakanov, Yury

AU - Lindvall, Niclas

AU - Nerushev, Oleg

AU - Kinaret, Jari

AU - Lee, Sangwook

AU - Campbell, Eleanor E.B.

PY - 2011/9/14

Y1 - 2011/9/14

N2 - Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental measurements and numerical simulations. The mechanical motion of the graphene gate is confirmed by using atomic force microscopy to directly measure the electrostatic deflection. The device geometry investigated here can also provide a sensitive measurement technique for detecting high-frequency motion of suspended membranes as required, e.g., for mass sensing.

AB - Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental measurements and numerical simulations. The mechanical motion of the graphene gate is confirmed by using atomic force microscopy to directly measure the electrostatic deflection. The device geometry investigated here can also provide a sensitive measurement technique for detecting high-frequency motion of suspended membranes as required, e.g., for mass sensing.

KW - Carbon nanotube

KW - field effect transistor

KW - graphene

KW - movable gate electrode

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U2 - 10.1021/nl201280q

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JO - Nano Letters

JF - Nano Letters

IS - 9

ER -

Carbon nanotube field effect transistors with suspended graphene gates

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Keywords

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