Carbon molecular beam epitaxy on various semiconductor substrates

S. K. Jerng; D. S. Yu; J. H. Lee; Y. S. Kim; C. Kim; S. Yoon; S. H. Chun

doi:10.1016/j.materresbull.2012.04.123

Carbon molecular beam epitaxy on various semiconductor substrates

S. K. Jerng, D. S. Yu, J. H. Lee, Y. S. Kim, C. Kim, S. Yoon, S. H. Chun

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Direct graphene growth on semiconductor substrates is an important goal for successful integration of graphene with the existing semiconductor technology. We test the feasibility of this goal by using molecular beam epitaxy on various semiconductor substrates: group IV (Si, SiC), group III-V (GaAs, GaN, InP), and group II-VI (ZnSe, ZnO). Graphitic carbon has been formed on most substrates except Si. In general, the crystallinities of carbon layers are better on substrates of hexagonal symmetry than those on cubic substrates. The flatness of graphitic carbon grown by molecular beam epitaxy is noticeable, which may help the integration with semiconductor structures.

Original language	English
Pages (from-to)	2772-2775
Number of pages	4
Journal	Materials Research Bulletin
Volume	47
Issue number	10
DOIs	https://doi.org/10.1016/j.materresbull.2012.04.123
State	Published - Oct 2012

Keywords

A. Thin films
B. Epitaxial growth
C. Atomic force microscopy
C. Raman spectroscopy
D. Microstructure

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10.1016/j.materresbull.2012.04.123

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title = "Carbon molecular beam epitaxy on various semiconductor substrates",

abstract = "Direct graphene growth on semiconductor substrates is an important goal for successful integration of graphene with the existing semiconductor technology. We test the feasibility of this goal by using molecular beam epitaxy on various semiconductor substrates: group IV (Si, SiC), group III-V (GaAs, GaN, InP), and group II-VI (ZnSe, ZnO). Graphitic carbon has been formed on most substrates except Si. In general, the crystallinities of carbon layers are better on substrates of hexagonal symmetry than those on cubic substrates. The flatness of graphitic carbon grown by molecular beam epitaxy is noticeable, which may help the integration with semiconductor structures.",

keywords = "A. Thin films, B. Epitaxial growth, C. Atomic force microscopy, C. Raman spectroscopy, D. Microstructure",

author = "Jerng, {S. K.} and Yu, {D. S.} and Lee, {J. H.} and Kim, {Y. S.} and C. Kim and S. Yoon and Chun, {S. H.}",

note = "Funding Information: This research was supported by the Priority Research Centers Program ( 2011-0018395 ), and the Basic Science Research Programs ( 2011-0026292 , KRF-2008-3130C00279 ), and the Center for Topological Matter in POSTECH ( 2011-0030786 ) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST).",

year = "2012",

month = oct,

doi = "10.1016/j.materresbull.2012.04.123",

language = "English",

volume = "47",

pages = "2772--2775",

journal = "Materials Research Bulletin",

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number = "10",

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TY - JOUR

T1 - Carbon molecular beam epitaxy on various semiconductor substrates

AU - Jerng, S. K.

AU - Yu, D. S.

AU - Lee, J. H.

AU - Kim, Y. S.

AU - Kim, C.

AU - Yoon, S.

AU - Chun, S. H.

N1 - Funding Information: This research was supported by the Priority Research Centers Program ( 2011-0018395 ), and the Basic Science Research Programs ( 2011-0026292 , KRF-2008-3130C00279 ), and the Center for Topological Matter in POSTECH ( 2011-0030786 ) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST).

PY - 2012/10

Y1 - 2012/10

N2 - Direct graphene growth on semiconductor substrates is an important goal for successful integration of graphene with the existing semiconductor technology. We test the feasibility of this goal by using molecular beam epitaxy on various semiconductor substrates: group IV (Si, SiC), group III-V (GaAs, GaN, InP), and group II-VI (ZnSe, ZnO). Graphitic carbon has been formed on most substrates except Si. In general, the crystallinities of carbon layers are better on substrates of hexagonal symmetry than those on cubic substrates. The flatness of graphitic carbon grown by molecular beam epitaxy is noticeable, which may help the integration with semiconductor structures.

AB - Direct graphene growth on semiconductor substrates is an important goal for successful integration of graphene with the existing semiconductor technology. We test the feasibility of this goal by using molecular beam epitaxy on various semiconductor substrates: group IV (Si, SiC), group III-V (GaAs, GaN, InP), and group II-VI (ZnSe, ZnO). Graphitic carbon has been formed on most substrates except Si. In general, the crystallinities of carbon layers are better on substrates of hexagonal symmetry than those on cubic substrates. The flatness of graphitic carbon grown by molecular beam epitaxy is noticeable, which may help the integration with semiconductor structures.

KW - A. Thin films

KW - B. Epitaxial growth

KW - C. Atomic force microscopy

KW - C. Raman spectroscopy

KW - D. Microstructure

UR - http://www.scopus.com/inward/record.url?scp=84866328235&partnerID=8YFLogxK

U2 - 10.1016/j.materresbull.2012.04.123

DO - 10.1016/j.materresbull.2012.04.123

M3 - Article

AN - SCOPUS:84866328235

SN - 0025-5408

VL - 47

SP - 2772

EP - 2775

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 10

ER -

Carbon molecular beam epitaxy on various semiconductor substrates

Abstract

Keywords

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