Direct graphene growth on semiconductor substrates is an important goal for successful integration of graphene with the existing semiconductor technology. We test the feasibility of this goal by using molecular beam epitaxy on various semiconductor substrates: group IV (Si, SiC), group III-V (GaAs, GaN, InP), and group II-VI (ZnSe, ZnO). Graphitic carbon has been formed on most substrates except Si. In general, the crystallinities of carbon layers are better on substrates of hexagonal symmetry than those on cubic substrates. The flatness of graphitic carbon grown by molecular beam epitaxy is noticeable, which may help the integration with semiconductor structures.
|Number of pages||4|
|Journal||Materials Research Bulletin|
|State||Published - Oct 2012|
Bibliographical noteFunding Information:
This research was supported by the Priority Research Centers Program ( 2011-0018395 ), and the Basic Science Research Programs ( 2011-0026292 , KRF-2008-3130C00279 ), and the Center for Topological Matter in POSTECH ( 2011-0030786 ) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST).
- A. Thin films
- B. Epitaxial growth
- C. Atomic force microscopy
- C. Raman spectroscopy
- D. Microstructure