Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures

Hyojong Cho, Ji Ho Ryu, Chandreswar Mahata, Muhammad Ismail, Ying Chen Chen, Yao Feng Chang, Seongjae Cho, Alexey Mikhaylov, Jack C. Lee, Sungjun Kim

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


In this work, we propose a self-rectifying Ni/SiNx/HfO2/p++Si resistive memory device to alleviate the sneak-path current occurring in crossbar array. The bilayer (Ni/SiNx/HfO2/p++Si) device exhibits a much higher rectification ratio (>104) in the low-resistance state for DC sweep mode and pulse mode than single-layer devices (Ni/SiNx/p++Si and Ni/HfO2/p++Si). The suppressed current of the bilayer device can be explained by the high Schottky barrier of the HfO2 layer under a negative bias. The modified read bias scheme in the crossbar array structure ensures a large number of word line (∼3971 at a read margin of 10%) using the advantage of the high rectification of the bilayer device. The bilayer device with the proposed read bias scheme is promising for high-density memory applications.

Original languageEnglish
Article number435102
JournalJournal of Physics D: Applied Physics
Issue number43
StatePublished - 21 Oct 2020

Bibliographical note

Publisher Copyright:
© 2020 IOP Publishing Ltd.


  • heterostructure
  • resistive switching
  • selector


Dive into the research topics of 'Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures'. Together they form a unique fingerprint.

Cite this