Bipolar resistive switching characteristics of Cu/TaOx/Pt structures

D. Cha; S. Lee; J. Jung; I. An; D. W. Kim

doi:10.3938/jkps.56.846

Bipolar resistive switching characteristics of Cu/TaO_x/Pt structures

D. Cha, S. Lee, J. Jung, I. An, D. W. Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We investigated the electrical properties of Cu/TaO_x/Pt structures, which were prepared by RF-sputtering at room temperature. Spectroscopic ellipsometry (SE) measurements revealed that the refractive indices of the TaO_x thin films decreased with increasing oxygen-to-argon gas ratio during the growth. The transport analyses based on the Poole-Frenkel emission model yielded the dielectric constant of the TaO _x layers; the results were consistent with the SE results. The Cu/TaO_x/Pt structures exhibited bipolar resistive switching (RS), and less-oxidized samples showed a more reliable RS behavior than more-oxidized ones. The high-to-low resistance ratio was nearly 10³, and the switching voltage was less than 1 V.

Original language	English
Pages (from-to)	846-850
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	56
Issue number	3
DOIs	https://doi.org/10.3938/jkps.56.846
State	Published - 15 Mar 2010

Keywords

Ionic memory switching
Sputtering
Tantalum oxide

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10.3938/jkps.56.846

Cite this

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title = "Bipolar resistive switching characteristics of Cu/TaOx/Pt structures",

abstract = "We investigated the electrical properties of Cu/TaOx/Pt structures, which were prepared by RF-sputtering at room temperature. Spectroscopic ellipsometry (SE) measurements revealed that the refractive indices of the TaOx thin films decreased with increasing oxygen-to-argon gas ratio during the growth. The transport analyses based on the Poole-Frenkel emission model yielded the dielectric constant of the TaO x layers; the results were consistent with the SE results. The Cu/TaOx/Pt structures exhibited bipolar resistive switching (RS), and less-oxidized samples showed a more reliable RS behavior than more-oxidized ones. The high-to-low resistance ratio was nearly 103, and the switching voltage was less than 1 V.",

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T1 - Bipolar resistive switching characteristics of Cu/TaOx/Pt structures

AU - Cha, D.

AU - Lee, S.

AU - Jung, J.

AU - An, I.

AU - Kim, D. W.

PY - 2010/3/15

Y1 - 2010/3/15

N2 - We investigated the electrical properties of Cu/TaOx/Pt structures, which were prepared by RF-sputtering at room temperature. Spectroscopic ellipsometry (SE) measurements revealed that the refractive indices of the TaOx thin films decreased with increasing oxygen-to-argon gas ratio during the growth. The transport analyses based on the Poole-Frenkel emission model yielded the dielectric constant of the TaO x layers; the results were consistent with the SE results. The Cu/TaOx/Pt structures exhibited bipolar resistive switching (RS), and less-oxidized samples showed a more reliable RS behavior than more-oxidized ones. The high-to-low resistance ratio was nearly 103, and the switching voltage was less than 1 V.

AB - We investigated the electrical properties of Cu/TaOx/Pt structures, which were prepared by RF-sputtering at room temperature. Spectroscopic ellipsometry (SE) measurements revealed that the refractive indices of the TaOx thin films decreased with increasing oxygen-to-argon gas ratio during the growth. The transport analyses based on the Poole-Frenkel emission model yielded the dielectric constant of the TaO x layers; the results were consistent with the SE results. The Cu/TaOx/Pt structures exhibited bipolar resistive switching (RS), and less-oxidized samples showed a more reliable RS behavior than more-oxidized ones. The high-to-low resistance ratio was nearly 103, and the switching voltage was less than 1 V.

KW - Ionic memory switching

KW - Sputtering

KW - Tantalum oxide

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