Abstract
In this work, the bias polarity dependent resistive switching behaviors in Cu/Si3N4/p+ Si RRAM memory cell have been closely studied. Different switching characteristics in both unipolar and bipolar modes after the positive forming are investigated. The bipolar switching did not need a forming process and showed better characteristics including endurance cycling, uniformity of switching parameters, and on/off resistance ratio. Also, the resistive switching characteristics by both positive and negative forming switching are compared. It has been confirmed that both unipolar and bipolar modes after the negative forming exhibits inferior resistive switching performances due to high forming voltage and current.
| Original language | English |
|---|---|
| Pages (from-to) | 547-550 |
| Number of pages | 4 |
| Journal | IEICE Transactions on Electronics |
| Volume | E99C |
| Issue number | 5 |
| DOIs | |
| State | Published - May 2016 |
Bibliographical note
Funding Information:This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (2015R1A2A1A01007307) and also in part supported by NRF funded by MISP (NRF-2014R1A1A1003644).
Publisher Copyright:
© Copyright 2016 The Institute of Electronics, Information and Communication Engineers.
Keywords
- Bias polarity
- Resistive random-access memory (RRAM)
- Silicon nitride (SiN)
- Switching parameters