Bi-induced vibrational modes in GaAsBi

M. J. Seong; S. Francoeur; S. Yoon; A. Mascarenhas; S. Tixier; M. Adamcyk; T. Tiedje

doi:10.1016/j.spmi.2005.02.004

Bi-induced vibrational modes in GaAsBi

M. J. Seong, S. Francoeur, S. Yoon, A. Mascarenhas, S. Tixier, M. Adamcyk, T. Tiedje

Department of Physics

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We have studied GaAs_1-xBi_x (up to x∼3%) using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at ∼186 cm^-1 and ∼214 cm ^-1 with increasing Raman intensity as the Bi concentration increases. By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN mode) in GaAsN, the phonon mode at ∼214 cm^-1 is identified as originating from substitutional Bi at the As site in GaAsBi.

Original language	English
Pages (from-to)	394-400
Number of pages	7
Journal	Superlattices and Microstructures
Volume	37
Issue number	6
DOIs	https://doi.org/10.1016/j.spmi.2005.02.004
State	Published - Jun 2005

Bibliographical note

Funding Information:
This work was supported by the Chung-Ang University Research Grants in 2004.

Keywords

GaAsBi
Isoelectronic impurity
Phonon
Raman scattering

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10.1016/j.spmi.2005.02.004

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title = "Bi-induced vibrational modes in GaAsBi",

abstract = "We have studied GaAs1-xBix (up to x∼3%) using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at ∼186 cm-1 and ∼214 cm -1 with increasing Raman intensity as the Bi concentration increases. By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN mode) in GaAsN, the phonon mode at ∼214 cm-1 is identified as originating from substitutional Bi at the As site in GaAsBi.",

keywords = "GaAsBi, Isoelectronic impurity, Phonon, Raman scattering",

author = "Seong, {M. J.} and S. Francoeur and S. Yoon and A. Mascarenhas and S. Tixier and M. Adamcyk and T. Tiedje",

note = "Funding Information: This work was supported by the Chung-Ang University Research Grants in 2004. ",

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language = "English",

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T1 - Bi-induced vibrational modes in GaAsBi

AU - Seong, M. J.

AU - Francoeur, S.

AU - Yoon, S.

AU - Mascarenhas, A.

AU - Tixier, S.

AU - Adamcyk, M.

AU - Tiedje, T.

N1 - Funding Information: This work was supported by the Chung-Ang University Research Grants in 2004.

PY - 2005/6

Y1 - 2005/6

N2 - We have studied GaAs1-xBix (up to x∼3%) using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at ∼186 cm-1 and ∼214 cm -1 with increasing Raman intensity as the Bi concentration increases. By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN mode) in GaAsN, the phonon mode at ∼214 cm-1 is identified as originating from substitutional Bi at the As site in GaAsBi.

AB - We have studied GaAs1-xBix (up to x∼3%) using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at ∼186 cm-1 and ∼214 cm -1 with increasing Raman intensity as the Bi concentration increases. By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN mode) in GaAsN, the phonon mode at ∼214 cm-1 is identified as originating from substitutional Bi at the As site in GaAsBi.

KW - GaAsBi

KW - Isoelectronic impurity

KW - Phonon

KW - Raman scattering

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U2 - 10.1016/j.spmi.2005.02.004

DO - 10.1016/j.spmi.2005.02.004

M3 - Article

AN - SCOPUS:18544384666

SN - 0749-6036

VL - 37

SP - 394

EP - 400

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 6

ER -

Bi-induced vibrational modes in GaAsBi

Abstract

Bibliographical note

Keywords

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