Bi-induced vibrational modes in GaAsBi

M. J. Seong, S. Francoeur, S. Yoon, A. Mascarenhas, S. Tixier, M. Adamcyk, T. Tiedje

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29 Scopus citations


We have studied GaAs1-xBix (up to x∼3%) using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at ∼186 cm-1 and ∼214 cm -1 with increasing Raman intensity as the Bi concentration increases. By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN mode) in GaAsN, the phonon mode at ∼214 cm-1 is identified as originating from substitutional Bi at the As site in GaAsBi.

Original languageEnglish
Pages (from-to)394-400
Number of pages7
JournalSuperlattices and Microstructures
Issue number6
StatePublished - Jun 2005

Bibliographical note

Funding Information:
This work was supported by the Chung-Ang University Research Grants in 2004.


  • GaAsBi
  • Isoelectronic impurity
  • Phonon
  • Raman scattering


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