TY - JOUR
T1 - Behavior of Si interstitials and boron-interstitial pairs at the Si/SiO2 interface
AU - Kirichenko, Taras A.
AU - Yu, Decai
AU - Banerjee, Sanjay K.
AU - Hwang, Gyeong S.
PY - 2004
Y1 - 2004
N2 - Using density functional theory calculations within the generalized gradient approximation, we have investigated the structure, energetics, bonding, and diffusion behavior of Si interstitials and boron-interstitial pairs at the Si/SiO2 interface. We find that interstitials are significantly stabilized at the Si/SiO2 interface and prefer to reside on the SiO2 side rather than the Si side. Due to the interstitial stabilization, boron-interstitial pairs are likely to be easily dissociated in the vicinity of the Si/SiO2 interface. This study provides valuable insight into interstitial annihilation and boron precipitation at the interface.
AB - Using density functional theory calculations within the generalized gradient approximation, we have investigated the structure, energetics, bonding, and diffusion behavior of Si interstitials and boron-interstitial pairs at the Si/SiO2 interface. We find that interstitials are significantly stabilized at the Si/SiO2 interface and prefer to reside on the SiO2 side rather than the Si side. Due to the interstitial stabilization, boron-interstitial pairs are likely to be easily dissociated in the vicinity of the Si/SiO2 interface. This study provides valuable insight into interstitial annihilation and boron precipitation at the interface.
UR - http://www.scopus.com/inward/record.url?scp=5544262692&partnerID=8YFLogxK
U2 - 10.1557/proc-810-c8.5
DO - 10.1557/proc-810-c8.5
M3 - Conference article
AN - SCOPUS:5544262692
SN - 0272-9172
VL - 810
SP - 339
EP - 344
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Silicon Front-End Junction Formation - Physics and Technology
Y2 - 13 April 2004 through 15 April 2004
ER -