BAVI-cell: A novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism

Jae Sung Sim; Il Han Park; Seongjae Cho; Tae Hun Kim; Ki Whan Song; Jihye Kong; Hyungcheol Shin; Jong Duk Lee; Byung Gook Park

doi:10.1109/.2005.1469237

BAVI-cell: A novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism

Jae Sung Sim
, Il Han Park
, Seongjae Cho
, Tae Hun Kim
, Ki Whan Song
, Jihye Kong
, Hyungcheol Shin
, Jong Duk Lee
, Byung Gook Park

Electronic and Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

A p-channel SONOS memory, based on band-to-band tunneling initiated avalanche hot-hole injection mechanism, was firstly proposed to solve the F-N erase problem in NAND flash application. The fabricated device with 50-nm gate length effectively suppressed the short channel effect and featured an excellent program and erase performance, where the time scale of a few and ∼100 μsec could be obtained, respectively.

Original language	English
Article number	1469237
Pages (from-to)	122-123
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2005
DOIs	https://doi.org/10.1109/.2005.1469237
State	Published - 2005
Event	2005 Symposium on VLSI Technology - Kyoto, Japan Duration: 14 Jun 2005 → 14 Jun 2005

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title = "BAVI-cell: A novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism",

abstract = "A p-channel SONOS memory, based on band-to-band tunneling initiated avalanche hot-hole injection mechanism, was firstly proposed to solve the F-N erase problem in NAND flash application. The fabricated device with 50-nm gate length effectively suppressed the short channel effect and featured an excellent program and erase performance, where the time scale of a few and ∼100 μsec could be obtained, respectively.",

author = "Sim, \{Jae Sung\} and Park, \{Il Han\} and Seongjae Cho and Kim, \{Tae Hun\} and Song, \{Ki Whan\} and Jihye Kong and Hyungcheol Shin and Lee, \{Jong Duk\} and Park, \{Byung Gook\}",

year = "2005",

doi = "10.1109/.2005.1469237",

language = "English",

volume = "2005",

pages = "122--123",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

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note = "2005 Symposium on VLSI Technology ; Conference date: 14-06-2005 Through 14-06-2005",

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T2 - 2005 Symposium on VLSI Technology

AU - Sim, Jae Sung

AU - Park, Il Han

AU - Cho, Seongjae

AU - Kim, Tae Hun

AU - Song, Ki Whan

AU - Kong, Jihye

AU - Shin, Hyungcheol

AU - Lee, Jong Duk

AU - Park, Byung Gook

PY - 2005

Y1 - 2005

N2 - A p-channel SONOS memory, based on band-to-band tunneling initiated avalanche hot-hole injection mechanism, was firstly proposed to solve the F-N erase problem in NAND flash application. The fabricated device with 50-nm gate length effectively suppressed the short channel effect and featured an excellent program and erase performance, where the time scale of a few and ∼100 μsec could be obtained, respectively.

AB - A p-channel SONOS memory, based on band-to-band tunneling initiated avalanche hot-hole injection mechanism, was firstly proposed to solve the F-N erase problem in NAND flash application. The fabricated device with 50-nm gate length effectively suppressed the short channel effect and featured an excellent program and erase performance, where the time scale of a few and ∼100 μsec could be obtained, respectively.

UR - https://www.scopus.com/pages/publications/33745160734

U2 - 10.1109/.2005.1469237

DO - 10.1109/.2005.1469237

M3 - Conference article

AN - SCOPUS:33745160734

SN - 0743-1562

VL - 2005

SP - 122

EP - 123

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

M1 - 1469237

Y2 - 14 June 2005 through 14 June 2005

ER -

BAVI-cell: A novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism

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