BAVI-cell: A novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism

Jae Sung Sim; Il Han Park; Seongjae Cho; Tae Hun Kim; Ki Whan Song; Jihye Kong; Hyungcheol Shin; Jong Duk Lee; Byung Gook Park

doi:10.1109/.2005.1469237

BAVI-cell: A novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism

Jae Sung Sim, Il Han Park, Seongjae Cho, Tae Hun Kim, Ki Whan Song, Jihye Kong, Hyungcheol Shin, Jong Duk Lee, Byung Gook Park

Electronic and Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

A p-channel SONOS memory, based on band-to-band tunneling initiated avalanche hot-hole injection mechanism, was firstly proposed to solve the F-N erase problem in NAND flash application. The fabricated device with 50-nm gate length effectively suppressed the short channel effect and featured an excellent program and erase performance, where the time scale of a few and ∼100 μsec could be obtained, respectively.

Original language	English
Article number	1469237
Pages (from-to)	122-123
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2005
DOIs	https://doi.org/10.1109/.2005.1469237
State	Published - 2005
Event	2005 Symposium on VLSI Technology - Kyoto, Japan Duration: 14 Jun 2005 → 14 Jun 2005

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title = "BAVI-cell: A novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism",

abstract = "A p-channel SONOS memory, based on band-to-band tunneling initiated avalanche hot-hole injection mechanism, was firstly proposed to solve the F-N erase problem in NAND flash application. The fabricated device with 50-nm gate length effectively suppressed the short channel effect and featured an excellent program and erase performance, where the time scale of a few and ∼100 μsec could be obtained, respectively.",

author = "Sim, {Jae Sung} and Park, {Il Han} and Seongjae Cho and Kim, {Tae Hun} and Song, {Ki Whan} and Jihye Kong and Hyungcheol Shin and Lee, {Jong Duk} and Park, {Byung Gook}",

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journal = "Digest of Technical Papers - Symposium on VLSI Technology",

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AU - Sim, Jae Sung

AU - Park, Il Han

AU - Cho, Seongjae

AU - Kim, Tae Hun

AU - Song, Ki Whan

AU - Kong, Jihye

AU - Shin, Hyungcheol

AU - Lee, Jong Duk

AU - Park, Byung Gook

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N2 - A p-channel SONOS memory, based on band-to-band tunneling initiated avalanche hot-hole injection mechanism, was firstly proposed to solve the F-N erase problem in NAND flash application. The fabricated device with 50-nm gate length effectively suppressed the short channel effect and featured an excellent program and erase performance, where the time scale of a few and ∼100 μsec could be obtained, respectively.

AB - A p-channel SONOS memory, based on band-to-band tunneling initiated avalanche hot-hole injection mechanism, was firstly proposed to solve the F-N erase problem in NAND flash application. The fabricated device with 50-nm gate length effectively suppressed the short channel effect and featured an excellent program and erase performance, where the time scale of a few and ∼100 μsec could be obtained, respectively.

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DO - 10.1109/.2005.1469237

M3 - Conference article

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EP - 123

JO - Digest of Technical Papers - Symposium on VLSI Technology

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Y2 - 14 June 2005 through 14 June 2005

ER -

BAVI-cell: A novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism

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