Batch fabrication of high-performance planar patch-clamp devices in quartz

James R. Heath; John M. Nagarah; Eunsu Paek; Yi Luo; Pin Wang; Gyeong S. Hwang

doi:10.1002/adma.201001793

Batch fabrication of high-performance planar patch-clamp devices in quartz

James R. Heath, John M. Nagarah, Eunsu Paek, Yi Luo, Pin Wang, Gyeong S. Hwang

Department of Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The success of the patch-clamp technique has driven an effort to create wafer-based patch-clamp platforms. We develop a lithographic/electrochemical processing scheme that generates ultrasmooth, high aspect ratio pores in quartz. These devices achieve gigaohm seals in nearly 80% of trials, with the majority exhibiting seal resistances from 20-80 G, competing with pipette-based patch-clamp measurements.

Original language	English
Pages (from-to)	4622-4627
Number of pages	6
Journal	Advanced Materials
Volume	22
Issue number	41
DOIs	https://doi.org/10.1002/adma.201001793
State	Published - 2 Nov 2010

Keywords

Gigaohm seals
High aspect ratio pore
Metal masks
Planar patch-clamp
Reactive ion etching

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10.1002/adma.201001793

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title = "Batch fabrication of high-performance planar patch-clamp devices in quartz",

abstract = "The success of the patch-clamp technique has driven an effort to create wafer-based patch-clamp platforms. We develop a lithographic/electrochemical processing scheme that generates ultrasmooth, high aspect ratio pores in quartz. These devices achieve gigaohm seals in nearly 80\% of trials, with the majority exhibiting seal resistances from 20-80 G, competing with pipette-based patch-clamp measurements.",

keywords = "Gigaohm seals, High aspect ratio pore, Metal masks, Planar patch-clamp, Reactive ion etching",

author = "Heath, \{James R.\} and Nagarah, \{John M.\} and Eunsu Paek and Yi Luo and Pin Wang and Hwang, \{Gyeong S.\}",

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AU - Heath, James R.

AU - Nagarah, John M.

AU - Paek, Eunsu

AU - Luo, Yi

AU - Wang, Pin

AU - Hwang, Gyeong S.

PY - 2010/11/2

Y1 - 2010/11/2

N2 - The success of the patch-clamp technique has driven an effort to create wafer-based patch-clamp platforms. We develop a lithographic/electrochemical processing scheme that generates ultrasmooth, high aspect ratio pores in quartz. These devices achieve gigaohm seals in nearly 80% of trials, with the majority exhibiting seal resistances from 20-80 G, competing with pipette-based patch-clamp measurements.

AB - The success of the patch-clamp technique has driven an effort to create wafer-based patch-clamp platforms. We develop a lithographic/electrochemical processing scheme that generates ultrasmooth, high aspect ratio pores in quartz. These devices achieve gigaohm seals in nearly 80% of trials, with the majority exhibiting seal resistances from 20-80 G, competing with pipette-based patch-clamp measurements.

KW - Gigaohm seals

KW - High aspect ratio pore

KW - Metal masks

KW - Planar patch-clamp

KW - Reactive ion etching

UR - https://www.scopus.com/pages/publications/78149456705

U2 - 10.1002/adma.201001793

DO - 10.1002/adma.201001793

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JO - Advanced Materials

JF - Advanced Materials

IS - 41

ER -

Batch fabrication of high-performance planar patch-clamp devices in quartz

Abstract

Keywords

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