Batch fabrication of high-performance planar patch-clamp devices in quartz

James R. Heath; John M. Nagarah; Eunsu Paek; Yi Luo; Pin Wang; Gyeong S. Hwang

doi:10.1002/adma.201001793

Batch fabrication of high-performance planar patch-clamp devices in quartz

James R. Heath, John M. Nagarah, Eunsu Paek, Yi Luo, Pin Wang, Gyeong S. Hwang

Department of Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The success of the patch-clamp technique has driven an effort to create wafer-based patch-clamp platforms. We develop a lithographic/electrochemical processing scheme that generates ultrasmooth, high aspect ratio pores in quartz. These devices achieve gigaohm seals in nearly 80% of trials, with the majority exhibiting seal resistances from 20-80 G, competing with pipette-based patch-clamp measurements.

Original language	English
Pages (from-to)	4622-4627
Number of pages	6
Journal	Advanced Materials
Volume	22
Issue number	41
DOIs	https://doi.org/10.1002/adma.201001793
State	Published - 2 Nov 2010

Keywords

Gigaohm seals
High aspect ratio pore
Metal masks
Planar patch-clamp
Reactive ion etching

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@article{7e8d338a1b6e42a1b188e8026d953b52,

title = "Batch fabrication of high-performance planar patch-clamp devices in quartz",

abstract = "The success of the patch-clamp technique has driven an effort to create wafer-based patch-clamp platforms. We develop a lithographic/electrochemical processing scheme that generates ultrasmooth, high aspect ratio pores in quartz. These devices achieve gigaohm seals in nearly 80% of trials, with the majority exhibiting seal resistances from 20-80 G, competing with pipette-based patch-clamp measurements.",

keywords = "Gigaohm seals, High aspect ratio pore, Metal masks, Planar patch-clamp, Reactive ion etching",

author = "Heath, {James R.} and Nagarah, {John M.} and Eunsu Paek and Yi Luo and Pin Wang and Hwang, {Gyeong S.}",

year = "2010",

month = nov,

day = "2",

doi = "10.1002/adma.201001793",

language = "English",

volume = "22",

pages = "4622--4627",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "41",

}

TY - JOUR

T1 - Batch fabrication of high-performance planar patch-clamp devices in quartz

AU - Heath, James R.

AU - Nagarah, John M.

AU - Paek, Eunsu

AU - Luo, Yi

AU - Wang, Pin

AU - Hwang, Gyeong S.

PY - 2010/11/2

Y1 - 2010/11/2

N2 - The success of the patch-clamp technique has driven an effort to create wafer-based patch-clamp platforms. We develop a lithographic/electrochemical processing scheme that generates ultrasmooth, high aspect ratio pores in quartz. These devices achieve gigaohm seals in nearly 80% of trials, with the majority exhibiting seal resistances from 20-80 G, competing with pipette-based patch-clamp measurements.

AB - The success of the patch-clamp technique has driven an effort to create wafer-based patch-clamp platforms. We develop a lithographic/electrochemical processing scheme that generates ultrasmooth, high aspect ratio pores in quartz. These devices achieve gigaohm seals in nearly 80% of trials, with the majority exhibiting seal resistances from 20-80 G, competing with pipette-based patch-clamp measurements.

KW - Gigaohm seals

KW - High aspect ratio pore

KW - Metal masks

KW - Planar patch-clamp

KW - Reactive ion etching

UR - http://www.scopus.com/inward/record.url?scp=78149456705&partnerID=8YFLogxK

U2 - 10.1002/adma.201001793

DO - 10.1002/adma.201001793

M3 - Article

C2 - 20830714

AN - SCOPUS:78149456705

SN - 0935-9648

VL - 22

SP - 4622

EP - 4627

JO - Advanced Materials

JF - Advanced Materials

IS - 41

ER -

Batch fabrication of high-performance planar patch-clamp devices in quartz

Abstract

Keywords

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