Barrier inhomogeneity in Ag Schottky contacts to bulk ZnO grown by different methods

Hogyoung Kim; Ah rum Sohn; Dong Wook Kim

doi:10.3938/jkps.60.509

Barrier inhomogeneity in Ag Schottky contacts to bulk ZnO grown by different methods

Hogyoung Kim, Ah rum Sohn, Dong Wook Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The electrical properties of Ag Schottky contacts to differently grown bulk ZnO single crystals were comparatively investigated. Schottky contacts to O-polar ZnO revealed higher barrier heights and lower ideality factors than those to Zn-polar ZnO. A higher degree of oxidation at the Ag-ZnO interface might occur for the O-polar ZnO, increasing the barrier heights. Compared to the current values measured under vacuum, those measured in an air ambient were decreased, suggesting that compensation of the surface conductive layer by acceptor-like adsorbates such as O ₂ and H ₂O plays an important role in the current transport of Ag/ZnO contacts.

Original language	English
Pages (from-to)	509-513
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	60
Issue number	3
DOIs	https://doi.org/10.3938/jkps.60.509
State	Published - Feb 2012

Bibliographical note

Funding Information:
This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (2010-0003594) funded by the Ministry of Education, Science and Technology (MEST) and the

Funding Information:
Energy Efficiency & Resources Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) (No. 2011T100200286) funded by the Ministry of Knowledge Economy (MKE).

Keywords

Bulk ZnO
Schottky contacts
Surface conductive layer

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10.3938/jkps.60.509

Cite this

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title = "Barrier inhomogeneity in Ag Schottky contacts to bulk ZnO grown by different methods",

abstract = "The electrical properties of Ag Schottky contacts to differently grown bulk ZnO single crystals were comparatively investigated. Schottky contacts to O-polar ZnO revealed higher barrier heights and lower ideality factors than those to Zn-polar ZnO. A higher degree of oxidation at the Ag-ZnO interface might occur for the O-polar ZnO, increasing the barrier heights. Compared to the current values measured under vacuum, those measured in an air ambient were decreased, suggesting that compensation of the surface conductive layer by acceptor-like adsorbates such as O 2 and H 2O plays an important role in the current transport of Ag/ZnO contacts.",

keywords = "Bulk ZnO, Schottky contacts, Surface conductive layer",

author = "Hogyoung Kim and Sohn, {Ah rum} and Kim, {Dong Wook}",

note = "Funding Information: This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (2010-0003594) funded by the Ministry of Education, Science and Technology (MEST) and the Funding Information: Energy Efficiency & Resources Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) (No. 2011T100200286) funded by the Ministry of Knowledge Economy (MKE).",

year = "2012",

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doi = "10.3938/jkps.60.509",

language = "English",

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AU - Sohn, Ah rum

AU - Kim, Dong Wook

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N2 - The electrical properties of Ag Schottky contacts to differently grown bulk ZnO single crystals were comparatively investigated. Schottky contacts to O-polar ZnO revealed higher barrier heights and lower ideality factors than those to Zn-polar ZnO. A higher degree of oxidation at the Ag-ZnO interface might occur for the O-polar ZnO, increasing the barrier heights. Compared to the current values measured under vacuum, those measured in an air ambient were decreased, suggesting that compensation of the surface conductive layer by acceptor-like adsorbates such as O 2 and H 2O plays an important role in the current transport of Ag/ZnO contacts.

AB - The electrical properties of Ag Schottky contacts to differently grown bulk ZnO single crystals were comparatively investigated. Schottky contacts to O-polar ZnO revealed higher barrier heights and lower ideality factors than those to Zn-polar ZnO. A higher degree of oxidation at the Ag-ZnO interface might occur for the O-polar ZnO, increasing the barrier heights. Compared to the current values measured under vacuum, those measured in an air ambient were decreased, suggesting that compensation of the surface conductive layer by acceptor-like adsorbates such as O 2 and H 2O plays an important role in the current transport of Ag/ZnO contacts.

KW - Bulk ZnO

KW - Schottky contacts

KW - Surface conductive layer

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JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

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ER -

Barrier inhomogeneity in Ag Schottky contacts to bulk ZnO grown by different methods

Abstract

Bibliographical note

Keywords

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