Barrier inhomogeneity in Ag Schottky contacts to bulk ZnO grown by different methods

Hogyoung Kim, Ah rum Sohn, Dong Wook Kim

Research output: Contribution to journalArticlepeer-review


The electrical properties of Ag Schottky contacts to differently grown bulk ZnO single crystals were comparatively investigated. Schottky contacts to O-polar ZnO revealed higher barrier heights and lower ideality factors than those to Zn-polar ZnO. A higher degree of oxidation at the Ag-ZnO interface might occur for the O-polar ZnO, increasing the barrier heights. Compared to the current values measured under vacuum, those measured in an air ambient were decreased, suggesting that compensation of the surface conductive layer by acceptor-like adsorbates such as O 2 and H 2O plays an important role in the current transport of Ag/ZnO contacts.

Original languageEnglish
Pages (from-to)509-513
Number of pages5
JournalJournal of the Korean Physical Society
Issue number3
StatePublished - Feb 2012

Bibliographical note

Funding Information:
This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (2010-0003594) funded by the Ministry of Education, Science and Technology (MEST) and the

Funding Information:
Energy Efficiency & Resources Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) (No. 2011T100200286) funded by the Ministry of Knowledge Economy (MKE).


  • Bulk ZnO
  • Schottky contacts
  • Surface conductive layer


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