@inproceedings{67f09f7954c8400a9915f14834b24cd3,
title = "Band offset FinFET-based URAM (unified-RAM) built on SiC for multi-functioning NVM and capacitorless 1T-DRAM",
abstract = "A FinFET-based unified-RAM (URAM) using the band offset of Si/SiC is demonstrated for the fusion of a non-volatile memory (NVM) and capacitorless 1T-DRAM operation. An oxide/nitride/oxide (O/N/O) gate dielectric and a floating body caused by the band offset are combined in a bulk FinFET to allow two memory operations in a single transistor. The device is fabricated on an epitaxially grown Si/SiC substrate and its process is fully compatible with a conventional bulk FinFET SONOS. Highly reliable NVM and high speed 1T-DRAM operation are confirmed in a single URAM cell.",
author = "Han, \{Jin Woo\} and Ryu, \{Seong Wan\} and Sungho Kim and Kim, \{Chung Jin\} and Ahn, \{Jae Hyuk\} and Choi, \{Sung Jin\} and Kyu, \{Jin Choi\} and Byung, \{Jin Cho\} and Jin, \{Soo Kim\} and Kwang, \{Hee Kim\} and Gi, \{Sung Lee\} and Jae, \{Sub Oh\} and Myong, \{Ho Song\} and Yun, \{Chang Park\} and Jeoung, \{Woo Kim\} and Choi, \{Yang Kyu\}",
year = "2008",
doi = "10.1109/VLSIT.2008.4588618",
language = "English",
isbn = "9781424418053",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "200--201",
booktitle = "2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT",
note = "2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT ; Conference date: 17-06-2008 Through 19-06-2008",
}