@inproceedings{67f09f7954c8400a9915f14834b24cd3,
title = "Band offset FinFET-based URAM (unified-RAM) built on SiC for multi-functioning NVM and capacitorless 1T-DRAM",
abstract = "A FinFET-based unified-RAM (URAM) using the band offset of Si/SiC is demonstrated for the fusion of a non-volatile memory (NVM) and capacitorless 1T-DRAM operation. An oxide/nitride/oxide (O/N/O) gate dielectric and a floating body caused by the band offset are combined in a bulk FinFET to allow two memory operations in a single transistor. The device is fabricated on an epitaxially grown Si/SiC substrate and its process is fully compatible with a conventional bulk FinFET SONOS. Highly reliable NVM and high speed 1T-DRAM operation are confirmed in a single URAM cell.",
author = "Han, {Jin Woo} and Ryu, {Seong Wan} and Sungho Kim and Kim, {Chung Jin} and Ahn, {Jae Hyuk} and Choi, {Sung Jin} and Kyu, {Jin Choi} and Byung, {Jin Cho} and Jin, {Soo Kim} and Kwang, {Hee Kim} and Gi, {Sung Lee} and Jae, {Sub Oh} and Myong, {Ho Song} and Yun, {Chang Park} and Jeoung, {Woo Kim} and Choi, {Yang Kyu}",
year = "2008",
doi = "10.1109/VLSIT.2008.4588618",
language = "English",
isbn = "9781424418053",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "200--201",
booktitle = "2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT",
note = "2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT ; Conference date: 17-06-2008 Through 19-06-2008",
}