Atomic control of homoepitaxial SrTiO3 films using laser molecular beam epitaxy

Dong Wook Kim; Dae Ho Kim; Bo Soo Kang; T. W. Noh; S. Shin; Z. G. Khim

doi:10.1016/S0921-4534(99)00020-9

Atomic control of homoepitaxial SrTiO₃ films using laser molecular beam epitaxy

Dong Wook Kim, Dae Ho Kim, Bo Soo Kang, T. W. Noh, S. Shin, Z. G. Khim

Department of Physics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Atomically flat SrTiO₃ (STO) substrates can be prepared by oxygen-annealing, however, step structures are known to be difficult to control. Various step structures of original substrates could be modified by growth of homoepitaxial films using laser molecular beam epitaxy (MBE). On substrates with a mixture of 1 and 2 unit cell (uc) steps, two kinds of films were grown: their growths were interrupted at either a top or a bottom of reflection high-energy electron diffraction (RHEED) intensity oscillations. The step structure of the top-interrupted film was similar to that of the substrate. However, in the bottom-interrupted film, bunched steps could be removed after deposition of only 2.5 monolayers (ML) and 1 uc steps could be generated. The recovery of the RHEED intensities reflecting the step height modification was found out to have a strong azimuthal dependence of incident electron-beam (e-beam) direction with respect to the step direction.

Original language	English
Pages (from-to)	246-254
Number of pages	9
Journal	Physica C: Superconductivity and its Applications
Volume	313
Issue number	3-4
DOIs	https://doi.org/10.1016/S0921-4534(99)00020-9
State	Published - 20 Feb 1999

Bibliographical note

Funding Information:
We would like to present our sincere thanks to I.S. Kim, J.S. Kim, and H. Lee for their helpful discussions. This work was financially supported by the MOST through the Nanostructure Technology Project and the Korea Science and Engineering Foundation through the RCDAMP at Pusan National University.

Keywords

Film
Homoepitaxial SrTiO
Laser molecular beam epitaxy
Oxygen-annealing
RHEED
Step structure

Access to Document

10.1016/S0921-4534(99)00020-9

Cite this

@article{eea7ebf5ff454802adffefdf166590bf,

title = "Atomic control of homoepitaxial SrTiO3 films using laser molecular beam epitaxy",

abstract = "Atomically flat SrTiO3 (STO) substrates can be prepared by oxygen-annealing, however, step structures are known to be difficult to control. Various step structures of original substrates could be modified by growth of homoepitaxial films using laser molecular beam epitaxy (MBE). On substrates with a mixture of 1 and 2 unit cell (uc) steps, two kinds of films were grown: their growths were interrupted at either a top or a bottom of reflection high-energy electron diffraction (RHEED) intensity oscillations. The step structure of the top-interrupted film was similar to that of the substrate. However, in the bottom-interrupted film, bunched steps could be removed after deposition of only 2.5 monolayers (ML) and 1 uc steps could be generated. The recovery of the RHEED intensities reflecting the step height modification was found out to have a strong azimuthal dependence of incident electron-beam (e-beam) direction with respect to the step direction.",

keywords = "Film, Homoepitaxial SrTiO, Laser molecular beam epitaxy, Oxygen-annealing, RHEED, Step structure",

author = "Kim, {Dong Wook} and Kim, {Dae Ho} and Kang, {Bo Soo} and Noh, {T. W.} and S. Shin and Khim, {Z. G.}",

note = "Funding Information: We would like to present our sincere thanks to I.S. Kim, J.S. Kim, and H. Lee for their helpful discussions. This work was financially supported by the MOST through the Nanostructure Technology Project and the Korea Science and Engineering Foundation through the RCDAMP at Pusan National University. ",

year = "1999",

month = feb,

day = "20",

doi = "10.1016/S0921-4534(99)00020-9",

language = "English",

volume = "313",

pages = "246--254",

journal = "Physica C: Superconductivity and its Applications",

issn = "0921-4534",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - Atomic control of homoepitaxial SrTiO3 films using laser molecular beam epitaxy

AU - Kim, Dong Wook

AU - Kim, Dae Ho

AU - Kang, Bo Soo

AU - Noh, T. W.

AU - Shin, S.

AU - Khim, Z. G.

N1 - Funding Information: We would like to present our sincere thanks to I.S. Kim, J.S. Kim, and H. Lee for their helpful discussions. This work was financially supported by the MOST through the Nanostructure Technology Project and the Korea Science and Engineering Foundation through the RCDAMP at Pusan National University.

PY - 1999/2/20

Y1 - 1999/2/20

N2 - Atomically flat SrTiO3 (STO) substrates can be prepared by oxygen-annealing, however, step structures are known to be difficult to control. Various step structures of original substrates could be modified by growth of homoepitaxial films using laser molecular beam epitaxy (MBE). On substrates with a mixture of 1 and 2 unit cell (uc) steps, two kinds of films were grown: their growths were interrupted at either a top or a bottom of reflection high-energy electron diffraction (RHEED) intensity oscillations. The step structure of the top-interrupted film was similar to that of the substrate. However, in the bottom-interrupted film, bunched steps could be removed after deposition of only 2.5 monolayers (ML) and 1 uc steps could be generated. The recovery of the RHEED intensities reflecting the step height modification was found out to have a strong azimuthal dependence of incident electron-beam (e-beam) direction with respect to the step direction.

AB - Atomically flat SrTiO3 (STO) substrates can be prepared by oxygen-annealing, however, step structures are known to be difficult to control. Various step structures of original substrates could be modified by growth of homoepitaxial films using laser molecular beam epitaxy (MBE). On substrates with a mixture of 1 and 2 unit cell (uc) steps, two kinds of films were grown: their growths were interrupted at either a top or a bottom of reflection high-energy electron diffraction (RHEED) intensity oscillations. The step structure of the top-interrupted film was similar to that of the substrate. However, in the bottom-interrupted film, bunched steps could be removed after deposition of only 2.5 monolayers (ML) and 1 uc steps could be generated. The recovery of the RHEED intensities reflecting the step height modification was found out to have a strong azimuthal dependence of incident electron-beam (e-beam) direction with respect to the step direction.

KW - Film

KW - Homoepitaxial SrTiO

KW - Laser molecular beam epitaxy

KW - Oxygen-annealing

KW - RHEED

KW - Step structure

UR - http://www.scopus.com/inward/record.url?scp=0033074999&partnerID=8YFLogxK

U2 - 10.1016/S0921-4534(99)00020-9

DO - 10.1016/S0921-4534(99)00020-9

M3 - Article

AN - SCOPUS:0033074999

SN - 0921-4534

VL - 313

SP - 246

EP - 254

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

IS - 3-4

ER -