Atomic and Electronic Manipulation of Robust Ferroelectric Polymorphs

Yonas Assefa Eshete; Kyungrok Kang; Seunghun Kang; Yejin Kim; Phuong Lien Nguyen; Deok Yong Cho; Yunseok Kim; Jaekwang Lee; Suyeon Cho; Heejun Yang

doi:10.1002/adma.202202633

Atomic and Electronic Manipulation of Robust Ferroelectric Polymorphs

Yonas Assefa Eshete, Kyungrok Kang, Seunghun Kang, Yejin Kim, Phuong Lien Nguyen, Deok Yong Cho, Yunseok Kim, Jaekwang Lee, Suyeon Cho, Heejun Yang

Department of Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Polymorphism allows the symmetry of the lattice and spatial charge distributions of atomically thin materials to be designed. While various polymorphs for superconducting, magnetic, and topological states have been extensively studied, polymorphic control is a challenge for robust ferroelectricity in atomically thin geometries. Here, the atomic and electric manipulation of ferroelectric polymorphs in Mo₁₋_xW_xTe₂ is reported. Atomic manipulation for polymorphic control via chemical pressure (substituting tungsten for molybdenum atoms) and charge density modulation can realize tunable polar lattice structures and robust ferroelectricity up to T = 400 K with a constant coercive field in an atomically thin material. Owing to the effective inversion symmetry breaking, the ferroelectric switching withstands a charge carrier density of up to 1.1 × 10¹³ cm⁻², developing an original diagram for ferroelectric switching in atomically thin materials.

Original language	English
Article number	2202633
Journal	Advanced Materials
Volume	34
Issue number	31
DOIs	https://doi.org/10.1002/adma.202202633
State	Published - 4 Aug 2022

Bibliographical note

Funding Information:
This research was supported by the Samsung Research Funding & Incubation Center of Samsung Electronics, under project no. SRFC‐MA1701‐01 and by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (NRF‐ 2018M3D1A1058793 and NRF‐2021M3H4A1A03054856). S.C. was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2020R1A2C2003377).

Publisher Copyright:
© 2022 Wiley-VCH GmbH.

Keywords

2D ferroelectricity
phase diagrams
phase transitions
polymorphism
screening

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10.1002/adma.202202633

Cite this

@article{2467f0ce72cb427b8e6ce028439f0809,

title = "Atomic and Electronic Manipulation of Robust Ferroelectric Polymorphs",

abstract = "Polymorphism allows the symmetry of the lattice and spatial charge distributions of atomically thin materials to be designed. While various polymorphs for superconducting, magnetic, and topological states have been extensively studied, polymorphic control is a challenge for robust ferroelectricity in atomically thin geometries. Here, the atomic and electric manipulation of ferroelectric polymorphs in Mo1−xWxTe2 is reported. Atomic manipulation for polymorphic control via chemical pressure (substituting tungsten for molybdenum atoms) and charge density modulation can realize tunable polar lattice structures and robust ferroelectricity up to T = 400 K with a constant coercive field in an atomically thin material. Owing to the effective inversion symmetry breaking, the ferroelectric switching withstands a charge carrier density of up to 1.1 × 1013 cm−2, developing an original diagram for ferroelectric switching in atomically thin materials.",

keywords = "2D ferroelectricity, phase diagrams, phase transitions, polymorphism, screening",

author = "Eshete, {Yonas Assefa} and Kyungrok Kang and Seunghun Kang and Yejin Kim and Nguyen, {Phuong Lien} and Cho, {Deok Yong} and Yunseok Kim and Jaekwang Lee and Suyeon Cho and Heejun Yang",

note = "Funding Information: This research was supported by the Samsung Research Funding & Incubation Center of Samsung Electronics, under project no. SRFC‐MA1701‐01 and by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (NRF‐ 2018M3D1A1058793 and NRF‐2021M3H4A1A03054856). S.C. was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2020R1A2C2003377). Publisher Copyright: {\textcopyright} 2022 Wiley-VCH GmbH.",

year = "2022",

month = aug,

day = "4",

doi = "10.1002/adma.202202633",

language = "English",

volume = "34",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "31",

}

TY - JOUR

T1 - Atomic and Electronic Manipulation of Robust Ferroelectric Polymorphs

AU - Eshete, Yonas Assefa

AU - Kang, Kyungrok

AU - Kang, Seunghun

AU - Kim, Yejin

AU - Nguyen, Phuong Lien

AU - Cho, Deok Yong

AU - Kim, Yunseok

AU - Lee, Jaekwang

AU - Cho, Suyeon

AU - Yang, Heejun

N1 - Funding Information: This research was supported by the Samsung Research Funding & Incubation Center of Samsung Electronics, under project no. SRFC‐MA1701‐01 and by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (NRF‐ 2018M3D1A1058793 and NRF‐2021M3H4A1A03054856). S.C. was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2020R1A2C2003377). Publisher Copyright: © 2022 Wiley-VCH GmbH.

PY - 2022/8/4

Y1 - 2022/8/4

N2 - Polymorphism allows the symmetry of the lattice and spatial charge distributions of atomically thin materials to be designed. While various polymorphs for superconducting, magnetic, and topological states have been extensively studied, polymorphic control is a challenge for robust ferroelectricity in atomically thin geometries. Here, the atomic and electric manipulation of ferroelectric polymorphs in Mo1−xWxTe2 is reported. Atomic manipulation for polymorphic control via chemical pressure (substituting tungsten for molybdenum atoms) and charge density modulation can realize tunable polar lattice structures and robust ferroelectricity up to T = 400 K with a constant coercive field in an atomically thin material. Owing to the effective inversion symmetry breaking, the ferroelectric switching withstands a charge carrier density of up to 1.1 × 1013 cm−2, developing an original diagram for ferroelectric switching in atomically thin materials.

AB - Polymorphism allows the symmetry of the lattice and spatial charge distributions of atomically thin materials to be designed. While various polymorphs for superconducting, magnetic, and topological states have been extensively studied, polymorphic control is a challenge for robust ferroelectricity in atomically thin geometries. Here, the atomic and electric manipulation of ferroelectric polymorphs in Mo1−xWxTe2 is reported. Atomic manipulation for polymorphic control via chemical pressure (substituting tungsten for molybdenum atoms) and charge density modulation can realize tunable polar lattice structures and robust ferroelectricity up to T = 400 K with a constant coercive field in an atomically thin material. Owing to the effective inversion symmetry breaking, the ferroelectric switching withstands a charge carrier density of up to 1.1 × 1013 cm−2, developing an original diagram for ferroelectric switching in atomically thin materials.

KW - 2D ferroelectricity

KW - phase diagrams

KW - phase transitions

KW - polymorphism

KW - screening

UR - http://www.scopus.com/inward/record.url?scp=85133039557&partnerID=8YFLogxK

U2 - 10.1002/adma.202202633

DO - 10.1002/adma.202202633

M3 - Article

C2 - 35730715

AN - SCOPUS:85133039557

SN - 0935-9648

VL - 34

JO - Advanced Materials

JF - Advanced Materials

IS - 31

M1 - 2202633

ER -

Atomic and Electronic Manipulation of Robust Ferroelectric Polymorphs

Abstract

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Keywords

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