Asymmetric Joule heating effect on a monolayer MoS2 device measured by a thermal imaging microscope

Gwanmu Lee, Sehwan Park, Dongseok Suh, Sung Ju Hong, Jaewan Choi, Hyunjin Ji

Research output: Contribution to journalArticlepeer-review

Abstract

Layered transition-metal dichalcogenides (TMDs) materials, which currently provide the most ideal two-dimensional (2D) semiconductor channels, have limited performance due to unavoidable interfacial defects caused by bottom–up processes. These defects act as carrier scattering sources in a 2D channel, causing Joule heat losses. We investigated Joule heating effects on CVD grown monolayer MoS2 field-effect transistors (FETs) by measuring thermal characteristics according to minute voltage conditions using an infrared (IR) thermal microscope and analyzed it based on the 3D heat transfer simulation. We confirmed that the temperature distribution is non-uniform and maximum temperature of the channel increases due to the asymmetry of the charge distribution when the transistor operated in the saturation mode. The maximum temperature as a function of input power density initially shows the linear relationship and gradually becomes more non-linear as input power increases, and the non-linearity becomes more pronounced at the negative drain-source bias conditions. Our results demonstrate the importance of charge distribution during device operation as well as total input power in thermal analysis studies based on 2D materials.

Original languageEnglish
Pages (from-to)619-627
Number of pages9
JournalJournal of the Korean Physical Society
Volume80
Issue number7
DOIs
StatePublished - Apr 2022

Bibliographical note

Funding Information:
This work was supported by the 2020 Research Fund of the University of Ulsan

Publisher Copyright:
© 2022, The Korean Physical Society.

Keywords

  • IR thermal imaging
  • Joule heating
  • MoS field-effect transistors

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