Aspect ratio independent etching of dielectrics

Gyeong S. Hwang, Konstantinos P. Giapis

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

Monte Carlo simulations of pattern-dependent charging during oxide etching predict that the etch rate scaling with aspect ratio breaks down when surface discharge currents are significant. Under conditions of ion-limited etching and no inhibitor deposition, the etch depth depends on the maximum incident ion energy, reaction threshold, and surface discharge threshold, and is the same irrespective of the trench width (≤0.5 μm).

Original languageEnglish
Pages (from-to)458-460
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number4
DOIs
StatePublished - 28 Jul 1997

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