Aspect ratio independent etching of dielectrics

Gyeong S. Hwang; Konstantinos P. Giapis

doi:10.1063/1.119578

Aspect ratio independent etching of dielectrics

Gyeong S. Hwang, Konstantinos P. Giapis

Department of Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Monte Carlo simulations of pattern-dependent charging during oxide etching predict that the etch rate scaling with aspect ratio breaks down when surface discharge currents are significant. Under conditions of ion-limited etching and no inhibitor deposition, the etch depth depends on the maximum incident ion energy, reaction threshold, and surface discharge threshold, and is the same irrespective of the trench width (≤0.5 μm).

Original language	English
Pages (from-to)	458-460
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	4
DOIs	https://doi.org/10.1063/1.119578
State	Published - 28 Jul 1997

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title = "Aspect ratio independent etching of dielectrics",

abstract = "Monte Carlo simulations of pattern-dependent charging during oxide etching predict that the etch rate scaling with aspect ratio breaks down when surface discharge currents are significant. Under conditions of ion-limited etching and no inhibitor deposition, the etch depth depends on the maximum incident ion energy, reaction threshold, and surface discharge threshold, and is the same irrespective of the trench width (≤0.5 μm).",

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AU - Giapis, Konstantinos P.

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AB - Monte Carlo simulations of pattern-dependent charging during oxide etching predict that the etch rate scaling with aspect ratio breaks down when surface discharge currents are significant. Under conditions of ion-limited etching and no inhibitor deposition, the etch depth depends on the maximum incident ion energy, reaction threshold, and surface discharge threshold, and is the same irrespective of the trench width (≤0.5 μm).

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SN - 0003-6951

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EP - 460

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Aspect ratio independent etching of dielectrics

Abstract

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