TY - JOUR
T1 - Artificial Room-Temperature Ferromagnetism of Bulk van der Waals VSe2
AU - Lee, Jinhyoung
AU - Kim, Gunhyoung
AU - Seok, Hyunho
AU - Choi, Hyunbin
AU - Lee, Hyeonjeong
AU - Lee, Seokchan
AU - Kim, Geonwook
AU - Kim, Hyunho
AU - Son, Seowoo
AU - Son, Sihoon
AU - Lee, Dongho
AU - Hwang, Hosin
AU - Shin, Hyelim
AU - Han, Sujeong
AU - Back, Geumji
AU - Ollier, Alexina
AU - Kim, Yeon Ji
AU - Fang, Lei
AU - Han, Gyuho
AU - Jung, Goo Eun
AU - Lee, Youngi
AU - Kim, Hyeong U.
AU - Watanabe, Kenji
AU - Taniguchi, Takashi
AU - Shin, Wonjun
AU - Cheema, Suraj
AU - Heinrich, Andreas
AU - Jang, Won Jun
AU - Kim, Taesung
N1 - Publisher Copyright:
© 2025 The Author(s). Advanced Science published by Wiley-VCH GmbH.
PY - 2025/9/11
Y1 - 2025/9/11
N2 - Originating from spin and orbital motion, van der Waals (vdW) ferromagnetism has emerged as a significant platform to experimentally access the fundamental physics of magnetism in reduced dimensions, including quantum computing, sensing, and data storage. However, currently, available vdW ferromagnetic materials can be achieved with mechanical exfoliation and low-temperature operation, which completely limits the monolithic integration of vdW ferromagnets with other functional materials. Nonetheless, the direct synthesis of room-temperature vdW ferromagnets has not been achieved commercially, owing to the imprecise control of the layer-by-layer growth, high-temperature synthesis, and low yield. To overcome these limitations, herein, an artificial vdW ferromagnetic platform has been reported, which activates the nano-crystallization and its corresponding ferromagnetism in bulk VSe2 via Ar + H2S plasma sulfurization. Sweeping the magnetic field, vdW ferromagnetism has been spatially resolved, which experimentally correlates with magnetization reversal behavior and domain pinning effects. Furthermore, nano-crystallization of VSe2 is clearly validated with transmission electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and selected area diffraction analysis. In conclusion, it is envisioned that the artificial vdW ferromagnetic platform can artificially inject the ferromagnetism in bulk vdW VSe2, which has not been possible previously.
AB - Originating from spin and orbital motion, van der Waals (vdW) ferromagnetism has emerged as a significant platform to experimentally access the fundamental physics of magnetism in reduced dimensions, including quantum computing, sensing, and data storage. However, currently, available vdW ferromagnetic materials can be achieved with mechanical exfoliation and low-temperature operation, which completely limits the monolithic integration of vdW ferromagnets with other functional materials. Nonetheless, the direct synthesis of room-temperature vdW ferromagnets has not been achieved commercially, owing to the imprecise control of the layer-by-layer growth, high-temperature synthesis, and low yield. To overcome these limitations, herein, an artificial vdW ferromagnetic platform has been reported, which activates the nano-crystallization and its corresponding ferromagnetism in bulk VSe2 via Ar + H2S plasma sulfurization. Sweeping the magnetic field, vdW ferromagnetism has been spatially resolved, which experimentally correlates with magnetization reversal behavior and domain pinning effects. Furthermore, nano-crystallization of VSe2 is clearly validated with transmission electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and selected area diffraction analysis. In conclusion, it is envisioned that the artificial vdW ferromagnetic platform can artificially inject the ferromagnetism in bulk vdW VSe2, which has not been possible previously.
KW - ferromagnetic
KW - magnetic force microscopy
KW - nano-crystallization
KW - van der Waals materials
KW - vanadium selenide
UR - https://www.scopus.com/pages/publications/105007110635
U2 - 10.1002/advs.202504746
DO - 10.1002/advs.202504746
M3 - Article
C2 - 40444581
AN - SCOPUS:105007110635
SN - 2198-3844
VL - 12
JO - Advanced Science
JF - Advanced Science
IS - 34
M1 - e04746
ER -