Anomalous temperature dependence of NMOSFET lifetime under hot electron stress

Hyunsang Hwang; Jung Suk Goo; Hoyup Kwon; Hyungsoon Shin

Anomalous temperature dependence of NMOSFET lifetime under hot electron stress

Hyunsang Hwang, Jung Suk Goo, Hoyup Kwon, Hyungsoon Shin

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, an anomalous temperature dependence of hot carrier lifetime has been extensively studied for the first time. We have found that the hot carrier lifetime does not increase linearly with increasing stress temperature. On the contrary, around 90°C, hot carrier lifetime decreases with increasing stress temperature. Using the charge pumping method, we found that interface state distribution after hot carrier stress at high temperature is less localized. Since interface state on channel region is more effective than that on LDD region, lower lifetime at high temperature can be explained. This anomalous behavior causes significant impact on device reliability while operating at high temperature.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Editors	Peter Ashburn, Chris Hill
Publisher	IEEE Computer Society
Pages	381-384
Number of pages	4
ISBN (Electronic)	2863321579
State	Published - 1994
Event	24th European Solid State Device Research Conference, ESSDERC 1994 - Edinburgh, United Kingdom Duration: 11 Sep 1994 → 15 Sep 1994

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	24th European Solid State Device Research Conference, ESSDERC 1994
Country/Territory	United Kingdom
City	Edinburgh
Period	11/09/94 → 15/09/94

Cite this

@inproceedings{a9bdc65e19cc4cca9eedb7abec85792e,

title = "Anomalous temperature dependence of NMOSFET lifetime under hot electron stress",

abstract = "In this paper, an anomalous temperature dependence of hot carrier lifetime has been extensively studied for the first time. We have found that the hot carrier lifetime does not increase linearly with increasing stress temperature. On the contrary, around 90°C, hot carrier lifetime decreases with increasing stress temperature. Using the charge pumping method, we found that interface state distribution after hot carrier stress at high temperature is less localized. Since interface state on channel region is more effective than that on LDD region, lower lifetime at high temperature can be explained. This anomalous behavior causes significant impact on device reliability while operating at high temperature.",

author = "Hyunsang Hwang and Goo, {Jung Suk} and Hoyup Kwon and Hyungsoon Shin",

note = "Publisher Copyright: {\textcopyright} 1994 Editions Frontieres.; 24th European Solid State Device Research Conference, ESSDERC 1994 ; Conference date: 11-09-1994 Through 15-09-1994",

year = "1994",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "381--384",

editor = "Peter Ashburn and Chris Hill",

booktitle = "European Solid-State Device Research Conference",

}

Hwang, H, Goo, JS, Kwon, H & Shin, H 1994, Anomalous temperature dependence of NMOSFET lifetime under hot electron stress. in P Ashburn & C Hill (eds), European Solid-State Device Research Conference., 5435741, European Solid-State Device Research Conference, IEEE Computer Society, pp. 381-384, 24th European Solid State Device Research Conference, ESSDERC 1994, Edinburgh, United Kingdom, 11/09/94.

Anomalous temperature dependence of NMOSFET lifetime under hot electron stress. / Hwang, Hyunsang; Goo, Jung Suk; Kwon, Hoyup et al.
European Solid-State Device Research Conference. ed. / Peter Ashburn; Chris Hill. IEEE Computer Society, 1994. p. 381-384 5435741 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Anomalous temperature dependence of NMOSFET lifetime under hot electron stress

AU - Hwang, Hyunsang

AU - Goo, Jung Suk

AU - Kwon, Hoyup

AU - Shin, Hyungsoon

PY - 1994

Y1 - 1994

N2 - In this paper, an anomalous temperature dependence of hot carrier lifetime has been extensively studied for the first time. We have found that the hot carrier lifetime does not increase linearly with increasing stress temperature. On the contrary, around 90°C, hot carrier lifetime decreases with increasing stress temperature. Using the charge pumping method, we found that interface state distribution after hot carrier stress at high temperature is less localized. Since interface state on channel region is more effective than that on LDD region, lower lifetime at high temperature can be explained. This anomalous behavior causes significant impact on device reliability while operating at high temperature.

AB - In this paper, an anomalous temperature dependence of hot carrier lifetime has been extensively studied for the first time. We have found that the hot carrier lifetime does not increase linearly with increasing stress temperature. On the contrary, around 90°C, hot carrier lifetime decreases with increasing stress temperature. Using the charge pumping method, we found that interface state distribution after hot carrier stress at high temperature is less localized. Since interface state on channel region is more effective than that on LDD region, lower lifetime at high temperature can be explained. This anomalous behavior causes significant impact on device reliability while operating at high temperature.

UR - http://www.scopus.com/inward/record.url?scp=84907699038&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84907699038

T3 - European Solid-State Device Research Conference

SP - 381

EP - 384

BT - European Solid-State Device Research Conference

A2 - Ashburn, Peter

A2 - Hill, Chris

PB - IEEE Computer Society

T2 - 24th European Solid State Device Research Conference, ESSDERC 1994

Y2 - 11 September 1994 through 15 September 1994

ER -

Anomalous temperature dependence of NMOSFET lifetime under hot electron stress

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