Anomalous effect of trench-oxide depth on alpha-particle-induced charge collection

Hyungsoon Shin, Nak Myeong Kim

Research output: Contribution to journalArticlepeer-review


The effect of trench-oxide depth on the alpha-particle-induced charge collection is analyzed for the first time. From the simulation results, it was found that the depth of trench oxide has a considerable influence on the amount of collected charge. The confining of generated charge by the trench oxide was identified as a cause of this anomalous effect. Therefore, the tradeoff between soft error rate and cell to cell isolation characteristics should be considered in optimizing the depth of trench oxide.

Original languageEnglish
Pages (from-to)280-282
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
StatePublished - Jun 1999

Bibliographical note

Funding Information:
Manuscript received October 9, 1998; revised February 15, 1999. This work was supported by LG Semicon Company, Ltd., Korea. The authors are with the Department of Electronic Engineering, Ewha Womans University, Seoul, Korea. Publisher Item Identifier S 0741-3106(99)05053-3.


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