Anomalous effect of trench-oxide depth on alpha-particle-induced charge collection

Hyungsoon Shin; Nak Myeong Kim

doi:10.1109/55.767098

Anomalous effect of trench-oxide depth on alpha-particle-induced charge collection

Hyungsoon Shin, Nak Myeong Kim

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of trench-oxide depth on the alpha-particle-induced charge collection is analyzed for the first time. From the simulation results, it was found that the depth of trench oxide has a considerable influence on the amount of collected charge. The confining of generated charge by the trench oxide was identified as a cause of this anomalous effect. Therefore, the tradeoff between soft error rate and cell to cell isolation characteristics should be considered in optimizing the depth of trench oxide.

Original language	English
Pages (from-to)	280-282
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	20
Issue number	6
DOIs	https://doi.org/10.1109/55.767098
State	Published - Jun 1999

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title = "Anomalous effect of trench-oxide depth on alpha-particle-induced charge collection",

abstract = "The effect of trench-oxide depth on the alpha-particle-induced charge collection is analyzed for the first time. From the simulation results, it was found that the depth of trench oxide has a considerable influence on the amount of collected charge. The confining of generated charge by the trench oxide was identified as a cause of this anomalous effect. Therefore, the tradeoff between soft error rate and cell to cell isolation characteristics should be considered in optimizing the depth of trench oxide.",

author = "Hyungsoon Shin and Kim, {Nak Myeong}",

note = "Funding Information: Manuscript received October 9, 1998; revised February 15, 1999. This work was supported by LG Semicon Company, Ltd., Korea. The authors are with the Department of Electronic Engineering, Ewha Womans University, Seoul, Korea. Publisher Item Identifier S 0741-3106(99)05053-3.",

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N2 - The effect of trench-oxide depth on the alpha-particle-induced charge collection is analyzed for the first time. From the simulation results, it was found that the depth of trench oxide has a considerable influence on the amount of collected charge. The confining of generated charge by the trench oxide was identified as a cause of this anomalous effect. Therefore, the tradeoff between soft error rate and cell to cell isolation characteristics should be considered in optimizing the depth of trench oxide.

AB - The effect of trench-oxide depth on the alpha-particle-induced charge collection is analyzed for the first time. From the simulation results, it was found that the depth of trench oxide has a considerable influence on the amount of collected charge. The confining of generated charge by the trench oxide was identified as a cause of this anomalous effect. Therefore, the tradeoff between soft error rate and cell to cell isolation characteristics should be considered in optimizing the depth of trench oxide.

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JO - IEEE Electron Device Letters

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Anomalous effect of trench-oxide depth on alpha-particle-induced charge collection

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