The effect of trench-oxide depth on the alpha-particle-induced charge collection is analyzed for the first time. From the simulation results, it was found that the depth of trench oxide has a considerable influence on the amount of collected charge. The confining of generated charge by the trench oxide was identified as a cause of this anomalous effect. Therefore, the tradeoff between soft error rate and cell to cell isolation characteristics should be considered in optimizing the depth of trench oxide.
Bibliographical noteFunding Information:
Manuscript received October 9, 1998; revised February 15, 1999. This work was supported by LG Semicon Company, Ltd., Korea. The authors are with the Department of Electronic Engineering, Ewha Womans University, Seoul, Korea. Publisher Item Identifier S 0741-3106(99)05053-3.