Abstract
The effect of trench-oxide depth on the alpha-particle-induced charge collection is analyzed for the first time. From the simulation results, it was found that the depth of trench oxide has a considerable influence on the amount of collected charge. The confining of generated charge by the trench oxide was identified as a cause of this anomalous effect. Therefore, the tradeoff between soft error rate and cell to cell isolation characteristics should be considered in optimizing the depth of trench oxide.
Original language | English |
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Pages (from-to) | 280-282 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 20 |
Issue number | 6 |
DOIs | |
State | Published - Jun 1999 |