Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology

Ji Sun Park, Seung Yeon Lee, Hyungsoon Shin, R. W. Dutton

Research output: Contribution to journalArticlepeer-review

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Using a scaling length (λ) analysis, the short-channel effects of bulk MOSFETs with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate structures are investigated. It is found that the minimum channel length should be greater than 5λ and the depletion thickness of the SSR should be less than 30 nm in order to be applicable to 70 nm CMOS technology.

Original languageEnglish
Pages (from-to)1222-1223
Number of pages2
JournalElectronics Letters
Issue number20
StatePublished - 26 Sep 2002

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