Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology

Ji Sun Park; Seung Yeon Lee; Hyungsoon Shin; R. W. Dutton

doi:10.1049/el:20020797

Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology

Ji Sun Park, Seung Yeon Lee, Hyungsoon Shin, R. W. Dutton

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Using a scaling length (λ) analysis, the short-channel effects of bulk MOSFETs with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate structures are investigated. It is found that the minimum channel length should be greater than 5λ and the depletion thickness of the SSR should be less than 30 nm in order to be applicable to 70 nm CMOS technology.

Original language	English
Pages (from-to)	1222-1223
Number of pages	2
Journal	Electronics Letters
Volume	38
Issue number	20
DOIs	https://doi.org/10.1049/el:20020797
State	Published - 26 Sep 2002

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@article{e6d18730e0c045b492aff3b8d886639f,

title = "Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology",

abstract = "Using a scaling length (λ) analysis, the short-channel effects of bulk MOSFETs with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate structures are investigated. It is found that the minimum channel length should be greater than 5λ and the depletion thickness of the SSR should be less than 30 nm in order to be applicable to 70 nm CMOS technology.",

author = "Park, {Ji Sun} and Lee, {Seung Yeon} and Hyungsoon Shin and Dutton, {R. W.}",

year = "2002",

month = sep,

day = "26",

doi = "10.1049/el:20020797",

language = "English",

volume = "38",

pages = "1222--1223",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "20",

}

TY - JOUR

T1 - Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology

AU - Park, Ji Sun

AU - Lee, Seung Yeon

AU - Shin, Hyungsoon

AU - Dutton, R. W.

PY - 2002/9/26

Y1 - 2002/9/26

N2 - Using a scaling length (λ) analysis, the short-channel effects of bulk MOSFETs with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate structures are investigated. It is found that the minimum channel length should be greater than 5λ and the depletion thickness of the SSR should be less than 30 nm in order to be applicable to 70 nm CMOS technology.

AB - Using a scaling length (λ) analysis, the short-channel effects of bulk MOSFETs with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate structures are investigated. It is found that the minimum channel length should be greater than 5λ and the depletion thickness of the SSR should be less than 30 nm in order to be applicable to 70 nm CMOS technology.

UR - http://www.scopus.com/inward/record.url?scp=0037179908&partnerID=8YFLogxK

U2 - 10.1049/el:20020797

DO - 10.1049/el:20020797

M3 - Article

AN - SCOPUS:0037179908

SN - 0013-5194

VL - 38

SP - 1222

EP - 1223

JO - Electronics Letters

JF - Electronics Letters

IS - 20

ER -

Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology

Abstract

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