TY - JOUR
T1 - Analysis on RF parameters of nanoscale tunneling field-effect transistor based on InAs/InGaAs/InP heterojunctions
AU - Woo, Sung Yun
AU - Yoon, Young Jun
AU - Cho, Seongjae
AU - Lee, Jung Hee
AU - Kang, In Man
PY - 2013/12
Y1 - 2013/12
N2 - Tunneling field-effect transistors (TFETs) based on the quantum mechanical band-to-band tunneling (BTBT) have advantages such as low off-current and subthreshold swing (S) below 60 mV/dec at room temperature. For these reasons, TFETs are considered as promising devices for low standby power (LSTP) applications. On the other hand, silicon (Si)-based TFETs have a drawback in low on-state current (Ion) drivability. In this work, we suggest a gate-all-around (GAA) TFET based on compound semiconductors to improve device performances. The proposed device materials consist of InAs (source), InGaAs (channel), and InP (drain). According to the composition (x) of Ga in In1?xGaxAs layer of the channel region, simulated devices have been investigated in terms of both direct-current (DC) and RF parameters including tunneling rate, transconductance (gm), gate capacitance (Cg), intrinsic delay time (t ), cut-off frequency (fT ) and maximum oscillation frequency (fmax). In this study, the obtained maximum values of , fT , and fmax for GAA InAs/In0.9Ga0.1As/InP heterojunction TFET were 21.2 fs, 7 THz, and 18 THz, respectively.
AB - Tunneling field-effect transistors (TFETs) based on the quantum mechanical band-to-band tunneling (BTBT) have advantages such as low off-current and subthreshold swing (S) below 60 mV/dec at room temperature. For these reasons, TFETs are considered as promising devices for low standby power (LSTP) applications. On the other hand, silicon (Si)-based TFETs have a drawback in low on-state current (Ion) drivability. In this work, we suggest a gate-all-around (GAA) TFET based on compound semiconductors to improve device performances. The proposed device materials consist of InAs (source), InGaAs (channel), and InP (drain). According to the composition (x) of Ga in In1?xGaxAs layer of the channel region, simulated devices have been investigated in terms of both direct-current (DC) and RF parameters including tunneling rate, transconductance (gm), gate capacitance (Cg), intrinsic delay time (t ), cut-off frequency (fT ) and maximum oscillation frequency (fmax). In this study, the obtained maximum values of , fT , and fmax for GAA InAs/In0.9Ga0.1As/InP heterojunction TFET were 21.2 fs, 7 THz, and 18 THz, respectively.
KW - Band-to-Band Tunneling
KW - InAs/InGaAs/InP Heterojunction
KW - RF Parameters
KW - Tunneling Field-Effect Transistor
UR - http://www.scopus.com/inward/record.url?scp=84892701787&partnerID=8YFLogxK
U2 - 10.1166/jnn.2013.8220
DO - 10.1166/jnn.2013.8220
M3 - Article
AN - SCOPUS:84892701787
SN - 1533-4880
VL - 13
SP - 8133
EP - 8136
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
IS - 12
ER -