Analysis of tunneling field-effect transistor with germanium source junction using small-signal equivalent circuit

Yung Hun Jung; In Man Kang; Seongjae Cho

doi:10.1002/mop.31438

Analysis of tunneling field-effect transistor with germanium source junction using small-signal equivalent circuit

Yung Hun Jung, In Man Kang, Seongjae Cho

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this study, germanium is used as the source junction material in a tunneling field-effect transistor (TFET) and the Ge-source TFET is analyzed in the perspectives of high-frequency performances. For analyses on the high-frequency parameters, a small-signal equivalent circuit with high credibility and device simulation are operated in cooperation. The errors in capacitances and transconductances, from both approaches, are within 10% up to the terahertz regime. It is found that the Ge-source TFET has smaller gate-to-drain capacitance and tunneling resistance than Si-source device. These features merit make Ge-source TFET more suitable to wide variety of high-speed and low-power applications.

Original language	English
Pages (from-to)	2922-2927
Number of pages	6
Journal	Microwave and Optical Technology Letters
Volume	60
Issue number	12
DOIs	https://doi.org/10.1002/mop.31438
State	Published - Dec 2018

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea funded by the Ministry of Science and ICT (Grant No. 2017R1A2B2011570) and also supported by the Ministry of Trade, Industry & Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC) support program for the development of the future semiconductor devices (Grant No. 10052928 & 10080513).

Funding Information:
information Korea Semiconductor Research Consortium (KSRC), Grant/Award Number: 10052928 - 10080513; Ministry of Trade, Industry - Energy (MOTIE); National Research Foundation of Korea, Grant/Award Number: 2017R1A2B2011570This work was supported by the National Research Foundation of Korea funded by the Ministry of Science and ICT (Grant No. 2017R1A2B2011570) and also supported by the Ministry of Trade, Industry & Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC) support program for the development of the future semiconductor devices (Grant No. 10052928 & 10080513).

Funding Information:
Korea Semiconductor Research Consortium (KSRC), Grant/Award Number: 10052928 & 10080513; Ministry of Trade, Industry & Energy (MOTIE); National Research Foundation of Korea, Grant/Award Number: 2017R1A2B2011570

Publisher Copyright:
© 2018 Wiley Periodicals, Inc.

Keywords

device simulation
germanium
high-frequency parameters
small-signal equivalent circuit
source junction
tunneling field-effect transistor

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10.1002/mop.31438

Cite this

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title = "Analysis of tunneling field-effect transistor with germanium source junction using small-signal equivalent circuit",

abstract = "In this study, germanium is used as the source junction material in a tunneling field-effect transistor (TFET) and the Ge-source TFET is analyzed in the perspectives of high-frequency performances. For analyses on the high-frequency parameters, a small-signal equivalent circuit with high credibility and device simulation are operated in cooperation. The errors in capacitances and transconductances, from both approaches, are within 10% up to the terahertz regime. It is found that the Ge-source TFET has smaller gate-to-drain capacitance and tunneling resistance than Si-source device. These features merit make Ge-source TFET more suitable to wide variety of high-speed and low-power applications.",

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author = "Jung, {Yung Hun} and Kang, {In Man} and Seongjae Cho",

note = "Funding Information: This work was supported by the National Research Foundation of Korea funded by the Ministry of Science and ICT (Grant No. 2017R1A2B2011570) and also supported by the Ministry of Trade, Industry & Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC) support program for the development of the future semiconductor devices (Grant No. 10052928 & 10080513). Funding Information: information Korea Semiconductor Research Consortium (KSRC), Grant/Award Number: 10052928 - 10080513; Ministry of Trade, Industry - Energy (MOTIE); National Research Foundation of Korea, Grant/Award Number: 2017R1A2B2011570This work was supported by the National Research Foundation of Korea funded by the Ministry of Science and ICT (Grant No. 2017R1A2B2011570) and also supported by the Ministry of Trade, Industry & Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC) support program for the development of the future semiconductor devices (Grant No. 10052928 & 10080513). Funding Information: Korea Semiconductor Research Consortium (KSRC), Grant/Award Number: 10052928 & 10080513; Ministry of Trade, Industry & Energy (MOTIE); National Research Foundation of Korea, Grant/Award Number: 2017R1A2B2011570 Publisher Copyright: {\textcopyright} 2018 Wiley Periodicals, Inc.",

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Analysis of tunneling field-effect transistor with germanium source junction using small-signal equivalent circuit

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Keywords

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