Analysis of the T Si5-Dependent Subthreshold Characteristics in Lightly-Doped Asymmetric Double-Gate MOSFETs

Hyerim Lee; Hyungsoon Shin

Analysis of the T _Si5-Dependent Subthreshold Characteristics in Lightly-Doped Asymmetric Double-Gate MOSFETs

Hyerim Lee, Hyungsoon Shin

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The subthreshold characteristics of double-gate (DG) MOSFETs with various thicknesses of a Si film (T _Si) are analyzed. It is found that, in comparison to the symmetrical DG-MOSFET, the subthreshold characteristics of the lightly-doped asymmetric device have a larger dependence on T _Si, which is due to the linear distribution of the potential in the Si-film region. Further, we derive an analytical equation which can explain these phenomena and verify the accuracy of the analytical equation by comparing them with the device simulation results. Due to these T _Sisensitive subthreshold characteristics, tight control of T _Si is required for lightly-doped asymmetric DG-MOSFETs to keep a large I _on/I _off ratio.

Original language	English
Pages (from-to)	56-59
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	44
Issue number	1
State	Published - Jan 2004

Keywords

Double-Gate MOSFET
Subthreshold characteristics
Volume inversion

Cite this

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title = "Analysis of the T Si5-Dependent Subthreshold Characteristics in Lightly-Doped Asymmetric Double-Gate MOSFETs",

abstract = "The subthreshold characteristics of double-gate (DG) MOSFETs with various thicknesses of a Si film (T Si) are analyzed. It is found that, in comparison to the symmetrical DG-MOSFET, the subthreshold characteristics of the lightly-doped asymmetric device have a larger dependence on T Si, which is due to the linear distribution of the potential in the Si-film region. Further, we derive an analytical equation which can explain these phenomena and verify the accuracy of the analytical equation by comparing them with the device simulation results. Due to these T Sisensitive subthreshold characteristics, tight control of T Si is required for lightly-doped asymmetric DG-MOSFETs to keep a large I on/I off ratio.",

keywords = "Double-Gate MOSFET, Subthreshold characteristics, Volume inversion",

author = "Hyerim Lee and Hyungsoon Shin",

year = "2004",

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T1 - Analysis of the T Si5-Dependent Subthreshold Characteristics in Lightly-Doped Asymmetric Double-Gate MOSFETs

AU - Lee, Hyerim

AU - Shin, Hyungsoon

PY - 2004/1

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N2 - The subthreshold characteristics of double-gate (DG) MOSFETs with various thicknesses of a Si film (T Si) are analyzed. It is found that, in comparison to the symmetrical DG-MOSFET, the subthreshold characteristics of the lightly-doped asymmetric device have a larger dependence on T Si, which is due to the linear distribution of the potential in the Si-film region. Further, we derive an analytical equation which can explain these phenomena and verify the accuracy of the analytical equation by comparing them with the device simulation results. Due to these T Sisensitive subthreshold characteristics, tight control of T Si is required for lightly-doped asymmetric DG-MOSFETs to keep a large I on/I off ratio.

AB - The subthreshold characteristics of double-gate (DG) MOSFETs with various thicknesses of a Si film (T Si) are analyzed. It is found that, in comparison to the symmetrical DG-MOSFET, the subthreshold characteristics of the lightly-doped asymmetric device have a larger dependence on T Si, which is due to the linear distribution of the potential in the Si-film region. Further, we derive an analytical equation which can explain these phenomena and verify the accuracy of the analytical equation by comparing them with the device simulation results. Due to these T Sisensitive subthreshold characteristics, tight control of T Si is required for lightly-doped asymmetric DG-MOSFETs to keep a large I on/I off ratio.

KW - Double-Gate MOSFET

KW - Subthreshold characteristics

KW - Volume inversion

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M3 - Article

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SN - 0374-4884

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SP - 56

EP - 59

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 1

ER -

Analysis of the T Si5-Dependent Subthreshold Characteristics in Lightly-Doped Asymmetric Double-Gate MOSFETs

Abstract

Keywords

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Analysis of the T _Si5-Dependent Subthreshold Characteristics in Lightly-Doped Asymmetric Double-Gate MOSFETs