Analysis of the sensing margin of silicon and poly-Si 1T-DRAM

Hyeonjeong Kim, Songyi Yoo, In Man Kang, Seongjae Cho, Wookyung Sun, Hyungsoon Shin

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). Poly-Si 1T-DRAM enables the cost-effective implementation of a silicon-on-insulator (SOI) structure and a three-dimensional (3D) stacked architecture for increasing integration density. However, studies on the transient characteristics of poly-Si 1T-DRAM are still lacking. In this paper, with TCAD simulation, we examine the differences between the memory mechanisms in poly-Si and silicon body 1T-DRAM. A silicon 1T-DRAM cell's data state is determined by the number of holes stored in a floating body (FB), while a poly-Si 1T-DRAM cell's state depends on the number of electrons trapped in its grain boundary (GB). This means that a poly-Si 1T-DRAM can perform memory operations by using GB as a storage region in thin body devices with a small FB area.

Original languageEnglish
JournalMicromachines
Volume11
Issue number2
DOIs
StatePublished - 1 Feb 2020

Bibliographical note

Funding Information:
This work was supported by the Ministry of Trade, Industry and Energy under grant 10080513, the Korea Semiconductor Research Consortium Support Program for the development of the future semiconductor devices, and RP-Grant 2019 of the Ewha Womans University.

Funding Information:
Figure 6. (a)Sensing margin and (b) trapped electron charge according to the number of GBs in the poly‐Si channel of poly‐Si 1T‐DRAM. 4. Conclusions 4. Conclusions This paper reports on work that a 1T-DRAM’s operating characteristics differ according to its body matTehriiasl .pTapheerp raeppeorratsls oonil lwusotrrka ttehsatth ae c1aTu‐sDeRs AofMth’se odpifeferraetnincge scbhyaraancatelyrzisitnicgst hdeifcfehra nacgceoirndcinhga rtgoe iatns d bothdey emneartgeryiabla. nTdhed ipaagpraemr aslosov eirllutismtrea.teIns athceo ncavuesnetsio onfa lthseil idcoifnfe1rTen-DceRsA bMy ,atnhaelyezxicnegss thhoe lechsainngthe einF B chparrogdeu acneda trheea ednceurrgrye nbtanddif fderiaegnrcaembse towveeern titmhee. “I0n” aa cnodnv“1en”tsitoantea.l sIniliccoonnt 1raTs‐tD, wRAheMn, tthhee beoxdceyssm haotelersia l ini sthpeo FlyBc pryrostdaullcien ea sreilaicdo cnu,rirtewnta ds icfofenrfeinrmcee bdetthwaetetnh tehne u“m0”b aenrdo f“1tr”a sptpateed. Ienl eccotnrotrnassti,n withseGn Bthpe lbaoydsya n miamteproiarlt aisn tproollyecirnyssttaaltleindei sstiilnicgouni,s hitm weanst .cIonnafidrmdietido nth, aitt wthaes nvuermifbieedr tohfa ttrtahpepseadm eelecchtraornacst einri sittsic Gs aBr e ploabytsa inaned iemvpenoritfatnhte rTobodyle inis cshtaatneg eddis.tinguishment. In addition, it was verified that the same characAtertihstiincsT abodyre obintasiinliecdo nev1eTn- Dif RthAeM Tbsodigy nisi fcihcaanntgleydr.e d uces the device’s sensing margin, while the polyA- Stih1inT -DTbRodAy Min rseitlaicinosn it1sTm‐DaRrgAinM. Insigtenrimficsaonftslyta rbeildituyc, eits isthiem dpeovrtiacne’tsf osrenlasrigneg mmeamrgoirny, wwihnidleo wthset o porelym‐Saii n1Ts‐tDabRleAfMor rmeteaminos riyts cmhaarragcinte. rIins ttiecrsm. Hs oowf setvaberil,idtyu, eitt ois tihmeplaocrtkanoft sfotor rlaagrgeer emgeiomnoirny awtihnidnobwosd y tod reevmicaei,ns isltiacbonle hfoasr ma seimgnoirfiyc acnhtalryascmtearlilstwicisn.d Hooww. eItvmere, adnuses tiloic tohne 1laTc-kD oRfA sMtorcaagnen roetghioavne inst aa bthleinm beomdoyr y decvhiacrea, csteilriicsotnic sh.aTs hae rseifgonrief,icpaonltyl-yS ism1Ta-lDl RwAinMdohwas. aItn madevanans tsaigliecofonr 1trTa‐nDsRisAtoMr sccaanlinnogt bheacvaue ssetaitbclea n moepmeoraryte cihnaarathctienrbisotidcys.. TInhaedredfiotrioen, p, iotleyn‐Saib 1leTs‐DthReAfaMbr hicaast iaonn aodfvaa3nDtasgtea cfkoerd trsatnrusicsttuorre stchaalitnsgig bneifciacuansetl y it icmapnr oovpeesratthee idne ag rteheino fbinodteyg.r aInti oand.dIintioonrd, eirt teonfaubrltehse trhiem fparborviceatthioenp eorff oar m3Da nscteacokfepdo lsytr-uSict1uTr-eD RthAaMt , sigansitfuicdaynftolyc uimsepdroovnehs othwe tdoeegfrfiecei eonf tilnytesgtorraetitornap. Ipne odrdeleerc ttoro fnusrtihnetrh iemGpBroivser ethque ipreedrf.ormance of poly‐ Si 1T‐DInRAadMd,i taio sntu, tdhyis fopcaupseerdc oonnf hiromws ttoh eefeffifceicetnotlfyG sBtoprer otpraeprtpieesd oenletchtreosnesn isnin tghem GarBg iisn rcehqauriarcetde.r istics of pIonl yad-Sdii1tiTo-nD, RthAisM p.aTpheer sceonnsfiinrmg ms tahreg ienffdecetc roefa GseBs pinroipnevretrisees porno tphoer tsieonnsitnogt hmeanrugminb cehraoraf cGteBrsisitnictsh e ofp poolylycr‐Syis t1aTll‐iDneRsAilMic.o nThceh asnennseilndgu me taorgininc rdeeacsreedatsreasp ipne idnveleercster opnrocphoarrtgieo.nI ttow tahsea nlsuomvbeerirf ioefd GthBast itnh e thneu pmolbyecrryosftGalBlisnein sitlhiceocnh cahnannenl eral tdhueer ttoh ainnctrheeaisreldo ctraatpiopnesdo erlegcrtarionns cizhearhgaes. aIt swigansi failcsaon vteerfiffeicetdo tnhatht e thsee nnsuimngbemr aorfg iGnBcsh ianr atchtee rcihstaincsnoelf rpaotlhye-rS ith1aTn-D thReAirM lo. cations or grain size has a significant effect on the sensing margin characteristics of poly‐Si 1T‐DRAM. Author Contributions: Conceptualization, H.K. and H.S.; methodology, W.S.; funding acquisition, H.S.; Author Contributions: Conceptualization, H.K. and H.S.; methodology, W.S.; funding acquisition, H.S.; inwversittiinggat—iorne,v Hiew.K.a, nSd.Ye.d, itainndg , WS.Y.S. .a; nrdesWou.Sr.c;essu, pIe.‐rMvi.sKio. na,nWd. SS..aCn.;d wHr.iSt.inAgl—l aourtihgoinrsalh advraefrte apdreapnadraatgiorne,e dHt.oKt.h; e writing—review and editing, S.Y. and W.S.; supervision, W.S. and H.S. All authors have read and agreed to the Funding: This work was supported by the Ministry of Trade, Industry and Energy under grant 10080513, the Korea Semiconductor Research Consortium Support Program for the development of the future semiconductor Funding: This work was supported by the Ministry of Trade, Industry and Energy under grant 10080513, the Korea Semiconductor Research Consortium Support Program for the development of the future semiconductor devices, Conflicts of Interest: The authors declare no conflict of interest. and RP‐Grant 2019 of the Ewha Womans University.

Publisher Copyright:
© 2020 by the authors.

Keywords

  • Electron trapping
  • Grain boundary
  • One-transistor dynamic random-access memory (1T-DRAM)
  • Polysilicon

Fingerprint

Dive into the research topics of 'Analysis of the sensing margin of silicon and poly-Si 1T-DRAM'. Together they form a unique fingerprint.

Cite this