Analysis of the sensing margin of silicon and poly-Si 1T-DRAM

Hyeonjeong Kim, Songyi Yoo, In Man Kang, Seongjae Cho, Wookyung Sun, Hyungsoon Shin

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). Poly-Si 1T-DRAM enables the cost-effective implementation of a silicon-on-insulator (SOI) structure and a three-dimensional (3D) stacked architecture for increasing integration density. However, studies on the transient characteristics of poly-Si 1T-DRAM are still lacking. In this paper, with TCAD simulation, we examine the differences between the memory mechanisms in poly-Si and silicon body 1T-DRAM. A silicon 1T-DRAM cell's data state is determined by the number of holes stored in a floating body (FB), while a poly-Si 1T-DRAM cell's state depends on the number of electrons trapped in its grain boundary (GB). This means that a poly-Si 1T-DRAM can perform memory operations by using GB as a storage region in thin body devices with a small FB area.

Original languageEnglish
Issue number2
StatePublished - 1 Feb 2020

Bibliographical note

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  • Electron trapping
  • Grain boundary
  • One-transistor dynamic random-access memory (1T-DRAM)
  • Polysilicon


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