Analysis of the effect of the density of states on the characteristics of thin-film transistors

Miryeon Kim; Injae Lee; Hyungsoon Shin; Min Ho Shin

doi:10.1109/TENCON.2015.7372859

Analysis of the effect of the density of states on the characteristics of thin-film transistors

Miryeon Kim, Injae Lee, Hyungsoon Shin, Min Ho Shin

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The effect of the density of states (DOS) on the electrical characteristics of thin-film transistors (TFTs) is investigated via an experiment and device simulations. The acceptor-like DOS of an n-type TFT was extracted based on its multi-frequency capacitance-voltage characteristics. The simulation results demonstrate that the electrical characteristics of n-type TFTs are affected not only by the acceptor-like DOS but also by the donor-like DOS.

Original language	English
Title of host publication	TENCON 2015 - 2015 IEEE Region 10 Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479986415
DOIs	https://doi.org/10.1109/TENCON.2015.7372859
State	Published - 5 Jan 2016
Event	35th IEEE Region 10 Conference, TENCON 2015 - Macau, Macao Duration: 1 Nov 2015 → 4 Nov 2015

Publication series

Name	IEEE Region 10 Annual International Conference, Proceedings/TENCON
Volume	2016-January
ISSN (Print)	2159-3442
ISSN (Electronic)	2159-3450

Conference

Conference	35th IEEE Region 10 Conference, TENCON 2015
Country/Territory	Macao
City	Macau
Period	1/11/15 → 4/11/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

acceptor-like density of states
donor-like density of states
thin-film transistors

Access to Document

10.1109/TENCON.2015.7372859

Cite this

Kim, M., Lee, I., Shin, H., & Shin, M. H. (2016). Analysis of the effect of the density of states on the characteristics of thin-film transistors. In TENCON 2015 - 2015 IEEE Region 10 Conference Article 7372859 (IEEE Region 10 Annual International Conference, Proceedings/TENCON; Vol. 2016-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TENCON.2015.7372859

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title = "Analysis of the effect of the density of states on the characteristics of thin-film transistors",

abstract = "The effect of the density of states (DOS) on the electrical characteristics of thin-film transistors (TFTs) is investigated via an experiment and device simulations. The acceptor-like DOS of an n-type TFT was extracted based on its multi-frequency capacitance-voltage characteristics. The simulation results demonstrate that the electrical characteristics of n-type TFTs are affected not only by the acceptor-like DOS but also by the donor-like DOS.",

keywords = "acceptor-like density of states, donor-like density of states, thin-film transistors",

author = "Miryeon Kim and Injae Lee and Hyungsoon Shin and Shin, {Min Ho}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 35th IEEE Region 10 Conference, TENCON 2015 ; Conference date: 01-11-2015 Through 04-11-2015",

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Kim, M, Lee, I, Shin, H & Shin, MH 2016, Analysis of the effect of the density of states on the characteristics of thin-film transistors. in TENCON 2015 - 2015 IEEE Region 10 Conference., 7372859, IEEE Region 10 Annual International Conference, Proceedings/TENCON, vol. 2016-January, Institute of Electrical and Electronics Engineers Inc., 35th IEEE Region 10 Conference, TENCON 2015, Macau, Macao, 1/11/15. https://doi.org/10.1109/TENCON.2015.7372859

Analysis of the effect of the density of states on the characteristics of thin-film transistors. / Kim, Miryeon; Lee, Injae; Shin, Hyungsoon et al.
TENCON 2015 - 2015 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc., 2016. 7372859 (IEEE Region 10 Annual International Conference, Proceedings/TENCON; Vol. 2016-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - The effect of the density of states (DOS) on the electrical characteristics of thin-film transistors (TFTs) is investigated via an experiment and device simulations. The acceptor-like DOS of an n-type TFT was extracted based on its multi-frequency capacitance-voltage characteristics. The simulation results demonstrate that the electrical characteristics of n-type TFTs are affected not only by the acceptor-like DOS but also by the donor-like DOS.

AB - The effect of the density of states (DOS) on the electrical characteristics of thin-film transistors (TFTs) is investigated via an experiment and device simulations. The acceptor-like DOS of an n-type TFT was extracted based on its multi-frequency capacitance-voltage characteristics. The simulation results demonstrate that the electrical characteristics of n-type TFTs are affected not only by the acceptor-like DOS but also by the donor-like DOS.

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Y2 - 1 November 2015 through 4 November 2015

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Analysis of the effect of the density of states on the characteristics of thin-film transistors

Abstract

Publication series

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Bibliographical note

Keywords

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