The effect of the density of states (DOS) on the electrical characteristics of thin-film transistors (TFTs) is investigated via an experiment and device simulations. The acceptor-like DOS of an n-type TFT was extracted based on its multi-frequency capacitance-voltage characteristics. The simulation results demonstrate that the electrical characteristics of n-type TFTs are affected not only by the acceptor-like DOS but also by the donor-like DOS.
|Title of host publication||TENCON 2015 - 2015 IEEE Region 10 Conference|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|State||Published - 5 Jan 2016|
|Event||35th IEEE Region 10 Conference, TENCON 2015 - Macau, Macao|
Duration: 1 Nov 2015 → 4 Nov 2015
|Name||IEEE Region 10 Annual International Conference, Proceedings/TENCON|
|Conference||35th IEEE Region 10 Conference, TENCON 2015|
|Period||1/11/15 → 4/11/15|
Bibliographical notePublisher Copyright:
© 2015 IEEE.
- acceptor-like density of states
- donor-like density of states
- thin-film transistors