Analysis of temperature-dependent current transport mechanism in Cu/n-type Ge Schottky junction

Hogyoung Kim; Se Hyun Kim; Chan Yeong Jung; Yunae Cho; Dong Wook Kim

doi:10.1016/j.vacuum.2015.08.011

Analysis of temperature-dependent current transport mechanism in Cu/n-type Ge Schottky junction

Hogyoung Kim, Se Hyun Kim, Chan Yeong Jung, Yunae Cho, Dong Wook Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We employed oxygen plasma treatment to improve the electrical properties in Cu/n-type Ge Schottky junctions and investigated temperature dependent current transport mechanism in the temperature range of 100-300 K. The Schottky barrier height increased commensurate with increasing temperature, which was attributed to barrier inhomogeneity. The inhomogeneity of the barrier was represented by a double Gaussian distribution, each one prevailing in a distinct temperature range: a high-temperature range from 220 to 300 K and a low-temperature range from 100 to 180 K. Modified Richardson plots revealed a Richardson constant of 160.0 Acm^-2 K^-2 for the high-temperature region (220-300 K), which is comparable to the theoretical value of 140.0 Acm^-2 K^-2 for n-type Ge. Reverse current analysis revealed that Poole-Frenkel and Schottky emissions were dominant in the lower and higher voltage regions, respectively.

Original language	English
Article number	6770
Pages (from-to)	125-128
Number of pages	4
Journal	Vacuum
Volume	121
DOIs	https://doi.org/10.1016/j.vacuum.2015.08.011
State	Published - 1 Nov 2015

Bibliographical note

Funding Information:
Y.C. and D.K. acknowledge the support from the Basic Science Research Program through a National Research Foundation of Korea Grant ( NRF-2013R1A1A2063744 ).

Publisher Copyright:
© 2015 Elsevier Ltd.

Keywords

Barrier inhomogeneity
Current transport
Richardson constant

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10.1016/j.vacuum.2015.08.011

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title = "Analysis of temperature-dependent current transport mechanism in Cu/n-type Ge Schottky junction",

abstract = "We employed oxygen plasma treatment to improve the electrical properties in Cu/n-type Ge Schottky junctions and investigated temperature dependent current transport mechanism in the temperature range of 100-300 K. The Schottky barrier height increased commensurate with increasing temperature, which was attributed to barrier inhomogeneity. The inhomogeneity of the barrier was represented by a double Gaussian distribution, each one prevailing in a distinct temperature range: a high-temperature range from 220 to 300 K and a low-temperature range from 100 to 180 K. Modified Richardson plots revealed a Richardson constant of 160.0 Acm-2 K-2 for the high-temperature region (220-300 K), which is comparable to the theoretical value of 140.0 Acm-2 K-2 for n-type Ge. Reverse current analysis revealed that Poole-Frenkel and Schottky emissions were dominant in the lower and higher voltage regions, respectively.",

keywords = "Barrier inhomogeneity, Current transport, Richardson constant",

author = "Hogyoung Kim and Kim, {Se Hyun} and Jung, {Chan Yeong} and Yunae Cho and Kim, {Dong Wook}",

note = "Funding Information: Y.C. and D.K. acknowledge the support from the Basic Science Research Program through a National Research Foundation of Korea Grant ( NRF-2013R1A1A2063744 ). Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd.",

year = "2015",

month = nov,

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doi = "10.1016/j.vacuum.2015.08.011",

language = "English",

volume = "121",

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journal = "Vacuum",

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AU - Kim, Hogyoung

AU - Kim, Se Hyun

AU - Jung, Chan Yeong

AU - Cho, Yunae

AU - Kim, Dong Wook

N1 - Funding Information: Y.C. and D.K. acknowledge the support from the Basic Science Research Program through a National Research Foundation of Korea Grant ( NRF-2013R1A1A2063744 ). Publisher Copyright: © 2015 Elsevier Ltd.

PY - 2015/11/1

Y1 - 2015/11/1

N2 - We employed oxygen plasma treatment to improve the electrical properties in Cu/n-type Ge Schottky junctions and investigated temperature dependent current transport mechanism in the temperature range of 100-300 K. The Schottky barrier height increased commensurate with increasing temperature, which was attributed to barrier inhomogeneity. The inhomogeneity of the barrier was represented by a double Gaussian distribution, each one prevailing in a distinct temperature range: a high-temperature range from 220 to 300 K and a low-temperature range from 100 to 180 K. Modified Richardson plots revealed a Richardson constant of 160.0 Acm-2 K-2 for the high-temperature region (220-300 K), which is comparable to the theoretical value of 140.0 Acm-2 K-2 for n-type Ge. Reverse current analysis revealed that Poole-Frenkel and Schottky emissions were dominant in the lower and higher voltage regions, respectively.

AB - We employed oxygen plasma treatment to improve the electrical properties in Cu/n-type Ge Schottky junctions and investigated temperature dependent current transport mechanism in the temperature range of 100-300 K. The Schottky barrier height increased commensurate with increasing temperature, which was attributed to barrier inhomogeneity. The inhomogeneity of the barrier was represented by a double Gaussian distribution, each one prevailing in a distinct temperature range: a high-temperature range from 220 to 300 K and a low-temperature range from 100 to 180 K. Modified Richardson plots revealed a Richardson constant of 160.0 Acm-2 K-2 for the high-temperature region (220-300 K), which is comparable to the theoretical value of 140.0 Acm-2 K-2 for n-type Ge. Reverse current analysis revealed that Poole-Frenkel and Schottky emissions were dominant in the lower and higher voltage regions, respectively.

KW - Barrier inhomogeneity

KW - Current transport

KW - Richardson constant

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SN - 0042-207X

VL - 121

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EP - 128

JO - Vacuum

JF - Vacuum

M1 - 6770

ER -

Analysis of temperature-dependent current transport mechanism in Cu/n-type Ge Schottky junction

Abstract

Bibliographical note

Keywords

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