Analysis of stress-induced mobility enhancement on (100)-oriented single- and double-gate n-MOSFETs using silicon-thickness-dependent deformation potential

Physics & Astronomy

• metal oxide semiconductors 56%
• field effect transistors 43%
• augmentation 33%
• silicon 29%
• n-type semiconductors 17%
• electron mobility 14%
• tensile stress 14%
• valleys 13%
• inversions 11%
• wafers 10%
• insulators 10%
• simulation 5%
• energy 4%

Chemical Compounds

• Deformation Potential 100%
• Field Effect 54%
• Compound Mobility 42%
• Electron Mobility 22%
• Simulation 11%
• Volume 10%
• Energy 8%
• Metal 8%

Engineering & Materials Science

• MOSFET devices 64%
• Silicon 43%
• Electron mobility 28%
• Tensile stress 18%