Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit

Yung Hun Jung; In Man Kang; Seongjae Cho

doi:10.23919/PIERS.2018.8598056

Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit

Yung Hun Jung, In Man Kang, Seongjae Cho

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, Si _1-x Ge _x is used as the source junction material in a tunneling field-effect transistor (TFET)and the device is analyzed in the perspectives of radio-frequency (RF)performances. Using the small-signal equivalent circuit with high accuracy in the RF domain, the errors in capacitances and transconductances have been effectively suppressed below 11 % at 600 GHz.

Original language	English
Title of host publication	2018 Progress In Electromagnetics Research Symposium, PIERS-Toyama 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2550-2553
Number of pages	4
ISBN (Electronic)	9784885523151
DOIs	https://doi.org/10.23919/PIERS.2018.8598056
State	Published - 31 Dec 2018
Event	2018 Progress In Electromagnetics Research Symposium, PIERS-Toyama 2018 - Toyama, Japan Duration: 1 Aug 2018 → 4 Aug 2018

Publication series

Name	Progress in Electromagnetics Research Symposium
Volume	2018-August
ISSN (Print)	1559-9450
ISSN (Electronic)	1931-7360

Conference

Conference	2018 Progress In Electromagnetics Research Symposium, PIERS-Toyama 2018
Country/Territory	Japan
City	Toyama
Period	1/08/18 → 4/08/18

Bibliographical note

Funding Information:
This work was supported by the Ministry of Science, ICT and Future Planning (NRF-2017R1A2B 2011570) and by the Ministry of Trade, Industry & Energy (MOTIE) through (10080513) and Korea Semiconductor Research Consortium support program for the development of the future semiconductor devices.

Publisher Copyright:
© 2018 The Institute of Electronics, Information and Communication Engineers (IEICE).

Access to Document

10.23919/PIERS.2018.8598056

Cite this

Jung, Y. H., Kang, I. M., & Cho, S. (2018). Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit. In 2018 Progress In Electromagnetics Research Symposium, PIERS-Toyama 2018 - Proceedings (pp. 2550-2553). Article 8598056 (Progress in Electromagnetics Research Symposium; Vol. 2018-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/PIERS.2018.8598056

Jung, Yung Hun ; Kang, In Man ; Cho, Seongjae. / Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit. 2018 Progress In Electromagnetics Research Symposium, PIERS-Toyama 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 2550-2553 (Progress in Electromagnetics Research Symposium).

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title = "Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit",

abstract = " In this study, Si 1-x Ge x is used as the source junction material in a tunneling field-effect transistor (TFET)and the device is analyzed in the perspectives of radio-frequency (RF)performances. Using the small-signal equivalent circuit with high accuracy in the RF domain, the errors in capacitances and transconductances have been effectively suppressed below 11 \% at 600 GHz.",

author = "Jung, \{Yung Hun\} and Kang, \{In Man\} and Seongjae Cho",

note = "Funding Information: This work was supported by the Ministry of Science, ICT and Future Planning (NRF-2017R1A2B 2011570) and by the Ministry of Trade, Industry \& Energy (MOTIE) through (10080513) and Korea Semiconductor Research Consortium support program for the development of the future semiconductor devices. Publisher Copyright: {\textcopyright} 2018 The Institute of Electronics, Information and Communication Engineers (IEICE).; 2018 Progress In Electromagnetics Research Symposium, PIERS-Toyama 2018 ; Conference date: 01-08-2018 Through 04-08-2018",

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doi = "10.23919/PIERS.2018.8598056",

language = "English",

series = "Progress in Electromagnetics Research Symposium",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Jung, YH, Kang, IM & Cho, S 2018, Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit. in 2018 Progress In Electromagnetics Research Symposium, PIERS-Toyama 2018 - Proceedings., 8598056, Progress in Electromagnetics Research Symposium, vol. 2018-August, Institute of Electrical and Electronics Engineers Inc., pp. 2550-2553, 2018 Progress In Electromagnetics Research Symposium, PIERS-Toyama 2018, Toyama, Japan, 1/08/18. https://doi.org/10.23919/PIERS.2018.8598056

Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit. / Jung, Yung Hun; Kang, In Man; Cho, Seongjae.
2018 Progress In Electromagnetics Research Symposium, PIERS-Toyama 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 2550-2553 8598056 (Progress in Electromagnetics Research Symposium; Vol. 2018-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N1 - Funding Information: This work was supported by the Ministry of Science, ICT and Future Planning (NRF-2017R1A2B 2011570) and by the Ministry of Trade, Industry & Energy (MOTIE) through (10080513) and Korea Semiconductor Research Consortium support program for the development of the future semiconductor devices. Publisher Copyright: © 2018 The Institute of Electronics, Information and Communication Engineers (IEICE).

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N2 - In this study, Si 1-x Ge x is used as the source junction material in a tunneling field-effect transistor (TFET)and the device is analyzed in the perspectives of radio-frequency (RF)performances. Using the small-signal equivalent circuit with high accuracy in the RF domain, the errors in capacitances and transconductances have been effectively suppressed below 11 % at 600 GHz.

AB - In this study, Si 1-x Ge x is used as the source junction material in a tunneling field-effect transistor (TFET)and the device is analyzed in the perspectives of radio-frequency (RF)performances. Using the small-signal equivalent circuit with high accuracy in the RF domain, the errors in capacitances and transconductances have been effectively suppressed below 11 % at 600 GHz.

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Jung YH, Kang IM, Cho S. Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit. In 2018 Progress In Electromagnetics Research Symposium, PIERS-Toyama 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 2550-2553. 8598056. (Progress in Electromagnetics Research Symposium). doi: 10.23919/PIERS.2018.8598056

Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit

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