TY - GEN
T1 - Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit
AU - Jung, Yung Hun
AU - Kang, In Man
AU - Cho, Seongjae
N1 - Funding Information:
This work was supported by the Ministry of Science, ICT and Future Planning (NRF-2017R1A2B 2011570) and by the Ministry of Trade, Industry & Energy (MOTIE) through (10080513) and Korea Semiconductor Research Consortium support program for the development of the future semiconductor devices.
Publisher Copyright:
© 2018 The Institute of Electronics, Information and Communication Engineers (IEICE).
PY - 2018/12/31
Y1 - 2018/12/31
N2 - In this study, Si 1-x Ge x is used as the source junction material in a tunneling field-effect transistor (TFET)and the device is analyzed in the perspectives of radio-frequency (RF)performances. Using the small-signal equivalent circuit with high accuracy in the RF domain, the errors in capacitances and transconductances have been effectively suppressed below 11 % at 600 GHz.
AB - In this study, Si 1-x Ge x is used as the source junction material in a tunneling field-effect transistor (TFET)and the device is analyzed in the perspectives of radio-frequency (RF)performances. Using the small-signal equivalent circuit with high accuracy in the RF domain, the errors in capacitances and transconductances have been effectively suppressed below 11 % at 600 GHz.
UR - http://www.scopus.com/inward/record.url?scp=85060951981&partnerID=8YFLogxK
U2 - 10.23919/PIERS.2018.8598056
DO - 10.23919/PIERS.2018.8598056
M3 - Conference contribution
AN - SCOPUS:85060951981
T3 - Progress in Electromagnetics Research Symposium
SP - 2550
EP - 2553
BT - 2018 Progress In Electromagnetics Research Symposium, PIERS-Toyama 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 Progress In Electromagnetics Research Symposium, PIERS-Toyama 2018
Y2 - 1 August 2018 through 4 August 2018
ER -