Analysis of read margin of crossbar array according to selector and resistor variation

Wookyung Sun; Hyungsoon Shin

doi:10.23919/ELINFOCOM.2018.8330651

Analysis of read margin of crossbar array according to selector and resistor variation

Wookyung Sun, Hyungsoon Shin

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The distribution characteristic of large-scale crossbar array architecture is investigated by a variability-aware MATLAB simulator. The read margin (RM) is examined as functions of array size, distribution of selector and resistor. The RM is strongly affected by the distribution of low resistance state (LRS) rather than that of high resistance state (HRS). Also, as the array size increases, the RM due to the selector variation continues to decrease, while as the RM degradation due to the resistor variation slows down. This phenomenon occurs because the leakage current of the crossbar array is greatly affected by the selector rather than the resistor.

Original language	English
Title of host publication	International Conference on Electronics, Information and Communication, ICEIC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-3
Number of pages	3
ISBN (Electronic)	9781538647547
DOIs	https://doi.org/10.23919/ELINFOCOM.2018.8330651
State	Published - 2 Apr 2018
Event	17th International Conference on Electronics, Information and Communication, ICEIC 2018 - Honolulu, United States Duration: 24 Jan 2018 → 27 Jan 2018

Publication series

Name	International Conference on Electronics, Information and Communication, ICEIC 2018
Volume	2018-January

Conference

Conference	17th International Conference on Electronics, Information and Communication, ICEIC 2018
Country/Territory	United States
City	Honolulu
Period	24/01/18 → 27/01/18

Bibliographical note

Publisher Copyright:
© 2018 Institute of Electronics and Information Engineers.

Keywords

Crossbar array
RRAM
read margin

Access to Document

10.23919/ELINFOCOM.2018.8330651

Cite this

Sun, W., & Shin, H. (2018). Analysis of read margin of crossbar array according to selector and resistor variation. In International Conference on Electronics, Information and Communication, ICEIC 2018 (pp. 1-3). (International Conference on Electronics, Information and Communication, ICEIC 2018; Vol. 2018-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ELINFOCOM.2018.8330651

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title = "Analysis of read margin of crossbar array according to selector and resistor variation",

abstract = "The distribution characteristic of large-scale crossbar array architecture is investigated by a variability-aware MATLAB simulator. The read margin (RM) is examined as functions of array size, distribution of selector and resistor. The RM is strongly affected by the distribution of low resistance state (LRS) rather than that of high resistance state (HRS). Also, as the array size increases, the RM due to the selector variation continues to decrease, while as the RM degradation due to the resistor variation slows down. This phenomenon occurs because the leakage current of the crossbar array is greatly affected by the selector rather than the resistor.",

keywords = "Crossbar array, RRAM, read margin",

author = "Wookyung Sun and Hyungsoon Shin",

note = "Publisher Copyright: {\textcopyright} 2018 Institute of Electronics and Information Engineers.; 17th International Conference on Electronics, Information and Communication, ICEIC 2018 ; Conference date: 24-01-2018 Through 27-01-2018",

year = "2018",

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language = "English",

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Sun, W & Shin, H 2018, Analysis of read margin of crossbar array according to selector and resistor variation. in International Conference on Electronics, Information and Communication, ICEIC 2018. International Conference on Electronics, Information and Communication, ICEIC 2018, vol. 2018-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 17th International Conference on Electronics, Information and Communication, ICEIC 2018, Honolulu, United States, 24/01/18. https://doi.org/10.23919/ELINFOCOM.2018.8330651

Analysis of read margin of crossbar array according to selector and resistor variation. / Sun, Wookyung; Shin, Hyungsoon.
International Conference on Electronics, Information and Communication, ICEIC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-3 (International Conference on Electronics, Information and Communication, ICEIC 2018; Vol. 2018-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - The distribution characteristic of large-scale crossbar array architecture is investigated by a variability-aware MATLAB simulator. The read margin (RM) is examined as functions of array size, distribution of selector and resistor. The RM is strongly affected by the distribution of low resistance state (LRS) rather than that of high resistance state (HRS). Also, as the array size increases, the RM due to the selector variation continues to decrease, while as the RM degradation due to the resistor variation slows down. This phenomenon occurs because the leakage current of the crossbar array is greatly affected by the selector rather than the resistor.

AB - The distribution characteristic of large-scale crossbar array architecture is investigated by a variability-aware MATLAB simulator. The read margin (RM) is examined as functions of array size, distribution of selector and resistor. The RM is strongly affected by the distribution of low resistance state (LRS) rather than that of high resistance state (HRS). Also, as the array size increases, the RM due to the selector variation continues to decrease, while as the RM degradation due to the resistor variation slows down. This phenomenon occurs because the leakage current of the crossbar array is greatly affected by the selector rather than the resistor.

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PB - Institute of Electrical and Electronics Engineers Inc.

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Sun W, Shin H. Analysis of read margin of crossbar array according to selector and resistor variation. In International Conference on Electronics, Information and Communication, ICEIC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-3. (International Conference on Electronics, Information and Communication, ICEIC 2018). doi: 10.23919/ELINFOCOM.2018.8330651

Analysis of read margin of crossbar array according to selector and resistor variation

Abstract

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Conference

Bibliographical note

Keywords

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