Analysis of radio frequency performance on GaAs/InGaAs heterojunction tunneling field-effect transistor which applicable for green energy system applications

Young Jun Yoon; Jae Hwa Seo; Hwan Gi Lee; Gwan Min Yoo; Young Jae Kim; Sung Yoon Kim; Sung Yun Woo; Hee Bum Roh; Hye Rim Eun; Hye Su Kang; Seongjae Cho; Eou Sik Cho; Jin Hyuk Bae; Jung Hee Lee; In Man Kang

doi:10.1109/ICMTMA.2014.28

Analysis of radio frequency performance on GaAs/InGaAs heterojunction tunneling field-effect transistor which applicable for green energy system applications

Young Jun Yoon, Jae Hwa Seo, Hwan Gi Lee, Gwan Min Yoo, Young Jae Kim, Sung Yoon Kim, Sung Yun Woo, Hee Bum Roh, Hye Rim Eun, Hye Su Kang, Seongjae Cho, Eou Sik Cho, Jin Hyuk Bae, Jung Hee Lee, In Man Kang

Electronic and Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

3 Scopus citations

Abstract

We have proposed a tunneling field-effect transistor (TFET) having a GaAs/InGaAs heterojunction structure for radio frequency (RF) application. The GaAs/InGaAs heterojunction TFETs are investigated in terms of DC and RF characteristics by using the device simulation technology. The proposed TFET showed excellent subthreshold swing (S) and on/off current ratio as low standby power (LSTP) devices. Moreover, the superb RF performances of proposed TFET were obtained by designing drain doping (D_Drain). It was confirmed that the GaAs/InGaAs heterojunction TFET is suitable for RF applications.

Original language	English
Pages	95-98
Number of pages	4
DOIs	https://doi.org/10.1109/ICMTMA.2014.28
State	Published - 2014
Event	2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014 - Zhangjiajie, Hunan, China Duration: 10 Jan 2014 → 11 Jan 2014

Conference

Conference	2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014
Country/Territory	China
City	Zhangjiajie, Hunan
Period	10/01/14 → 11/01/14

Keywords

Cut-off Frequency
Device simulator
Heterojunction Structure
Radio Frequency
Subthreshold swing
Tunneling Field-Effect Transistor

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10.1109/ICMTMA.2014.28

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Yoon, Y. J., Seo, J. H., Lee, H. G., Yoo, G. M., Kim, Y. J., Kim, S. Y., Woo, S. Y., Roh, H. B., Eun, H. R., Kang, H. S., Cho, S., Cho, E. S., Bae, J. H., Lee, J. H., & Kang, I. M. (2014). Analysis of radio frequency performance on GaAs/InGaAs heterojunction tunneling field-effect transistor which applicable for green energy system applications. 95-98. Paper presented at 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014, Zhangjiajie, Hunan, China. https://doi.org/10.1109/ICMTMA.2014.28

@conference{7c390b83ca044d449cd3194d55f0941e,

title = "Analysis of radio frequency performance on GaAs/InGaAs heterojunction tunneling field-effect transistor which applicable for green energy system applications",

abstract = "We have proposed a tunneling field-effect transistor (TFET) having a GaAs/InGaAs heterojunction structure for radio frequency (RF) application. The GaAs/InGaAs heterojunction TFETs are investigated in terms of DC and RF characteristics by using the device simulation technology. The proposed TFET showed excellent subthreshold swing (S) and on/off current ratio as low standby power (LSTP) devices. Moreover, the superb RF performances of proposed TFET were obtained by designing drain doping (DDrain). It was confirmed that the GaAs/InGaAs heterojunction TFET is suitable for RF applications.",

keywords = "Cut-off Frequency, Device simulator, Heterojunction Structure, Radio Frequency, Subthreshold swing, Tunneling Field-Effect Transistor",

author = "Yoon, {Young Jun} and Seo, {Jae Hwa} and Lee, {Hwan Gi} and Yoo, {Gwan Min} and Kim, {Young Jae} and Kim, {Sung Yoon} and Woo, {Sung Yun} and Roh, {Hee Bum} and Eun, {Hye Rim} and Kang, {Hye Su} and Seongjae Cho and Cho, {Eou Sik} and Bae, {Jin Hyuk} and Lee, {Jung Hee} and Kang, {In Man}",

year = "2014",

doi = "10.1109/ICMTMA.2014.28",

language = "English",

pages = "95--98",

note = "2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014 ; Conference date: 10-01-2014 Through 11-01-2014",

}

Yoon, YJ, Seo, JH, Lee, HG, Yoo, GM, Kim, YJ, Kim, SY, Woo, SY, Roh, HB, Eun, HR, Kang, HS, Cho, S, Cho, ES, Bae, JH, Lee, JH & Kang, IM 2014, 'Analysis of radio frequency performance on GaAs/InGaAs heterojunction tunneling field-effect transistor which applicable for green energy system applications', Paper presented at 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014, Zhangjiajie, Hunan, China, 10/01/14 - 11/01/14 pp. 95-98. https://doi.org/10.1109/ICMTMA.2014.28

Analysis of radio frequency performance on GaAs/InGaAs heterojunction tunneling field-effect transistor which applicable for green energy system applications. / Yoon, Young Jun; Seo, Jae Hwa; Lee, Hwan Gi et al.
2014. 95-98 Paper presented at 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014, Zhangjiajie, Hunan, China.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Analysis of radio frequency performance on GaAs/InGaAs heterojunction tunneling field-effect transistor which applicable for green energy system applications

AU - Yoon, Young Jun

AU - Seo, Jae Hwa

AU - Lee, Hwan Gi

AU - Yoo, Gwan Min

AU - Kim, Young Jae

AU - Kim, Sung Yoon

AU - Woo, Sung Yun

AU - Roh, Hee Bum

AU - Eun, Hye Rim

AU - Kang, Hye Su

AU - Cho, Seongjae

AU - Cho, Eou Sik

AU - Bae, Jin Hyuk

AU - Lee, Jung Hee

AU - Kang, In Man

PY - 2014

Y1 - 2014

N2 - We have proposed a tunneling field-effect transistor (TFET) having a GaAs/InGaAs heterojunction structure for radio frequency (RF) application. The GaAs/InGaAs heterojunction TFETs are investigated in terms of DC and RF characteristics by using the device simulation technology. The proposed TFET showed excellent subthreshold swing (S) and on/off current ratio as low standby power (LSTP) devices. Moreover, the superb RF performances of proposed TFET were obtained by designing drain doping (DDrain). It was confirmed that the GaAs/InGaAs heterojunction TFET is suitable for RF applications.

AB - We have proposed a tunneling field-effect transistor (TFET) having a GaAs/InGaAs heterojunction structure for radio frequency (RF) application. The GaAs/InGaAs heterojunction TFETs are investigated in terms of DC and RF characteristics by using the device simulation technology. The proposed TFET showed excellent subthreshold swing (S) and on/off current ratio as low standby power (LSTP) devices. Moreover, the superb RF performances of proposed TFET were obtained by designing drain doping (DDrain). It was confirmed that the GaAs/InGaAs heterojunction TFET is suitable for RF applications.

KW - Cut-off Frequency

KW - Device simulator

KW - Heterojunction Structure

KW - Radio Frequency

KW - Subthreshold swing

KW - Tunneling Field-Effect Transistor

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U2 - 10.1109/ICMTMA.2014.28

DO - 10.1109/ICMTMA.2014.28

M3 - Paper

AN - SCOPUS:84900431040

SP - 95

EP - 98

T2 - 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014

Y2 - 10 January 2014 through 11 January 2014

ER -

Yoon YJ, Seo JH, Lee HG, Yoo GM, Kim YJ, Kim SY et al.. Analysis of radio frequency performance on GaAs/InGaAs heterojunction tunneling field-effect transistor which applicable for green energy system applications. 2014. Paper presented at 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014, Zhangjiajie, Hunan, China. doi: 10.1109/ICMTMA.2014.28

Analysis of radio frequency performance on GaAs/InGaAs heterojunction tunneling field-effect transistor which applicable for green energy system applications

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