Analysis of interface states and series resistance in Ag/m-plane ZnO Schottky diodes

Hogyoung Kim; Haeri Kim; Dong Wook Kim

doi:10.3938/jkps.63.2034

Analysis of interface states and series resistance in Ag/m-plane ZnO Schottky diodes

Hogyoung Kim, Haeri Kim, Dong Wook Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The effect of interfaces states on the electrical properties in Ag/m-plane ZnO Schottky contacts was investigated using both current-voltage (I-V) and capacitance-voltage (C-V) measurements. The measured C-V characteristics showed strong dependences on the bias voltage and frequency. The interface state densities from the I-V characteristics were found to vary from 1.72 × 10¹³ eV^-1cm^-2 at E _C-0.32 eV to 1.68 × 10¹² eV^-1cm^-2 at E _C-0.54 eV. The interface state densities from the conductance-frequency (G/ω - f) characteristics also were within this range. The series resistance vs. voltage (R _S - V) plot showed a peak in the small forward bias region (0 ∼ 0.5 V), which was attributed to the contribution of interface states to the series resistance.

Original language	English
Pages (from-to)	2034-2038
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	63
Issue number	10
DOIs	https://doi.org/10.3938/jkps.63.2034
State	Published - 2013

Bibliographical note

Funding Information:
This work was supported in part by the Energy Efficiency & Resources Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP, No. 2011T100200286) funded by the Ministry of Knowledge Economy (MKE).

Keywords

Interface states
m-plane ZnO
Series resistance

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10.3938/jkps.63.2034

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title = "Analysis of interface states and series resistance in Ag/m-plane ZnO Schottky diodes",

abstract = "The effect of interfaces states on the electrical properties in Ag/m-plane ZnO Schottky contacts was investigated using both current-voltage (I-V) and capacitance-voltage (C-V) measurements. The measured C-V characteristics showed strong dependences on the bias voltage and frequency. The interface state densities from the I-V characteristics were found to vary from 1.72 × 1013 eV-1cm-2 at E C-0.32 eV to 1.68 × 1012 eV-1cm-2 at E C-0.54 eV. The interface state densities from the conductance-frequency (G/ω - f) characteristics also were within this range. The series resistance vs. voltage (R S - V) plot showed a peak in the small forward bias region (0 ∼ 0.5 V), which was attributed to the contribution of interface states to the series resistance.",

keywords = "Interface states, m-plane ZnO, Series resistance",

author = "Hogyoung Kim and Haeri Kim and Kim, {Dong Wook}",

note = "Funding Information: This work was supported in part by the Energy Efficiency & Resources Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP, No. 2011T100200286) funded by the Ministry of Knowledge Economy (MKE).",

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doi = "10.3938/jkps.63.2034",

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AU - Kim, Hogyoung

AU - Kim, Haeri

AU - Kim, Dong Wook

N1 - Funding Information: This work was supported in part by the Energy Efficiency & Resources Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP, No. 2011T100200286) funded by the Ministry of Knowledge Economy (MKE).

PY - 2013

Y1 - 2013

N2 - The effect of interfaces states on the electrical properties in Ag/m-plane ZnO Schottky contacts was investigated using both current-voltage (I-V) and capacitance-voltage (C-V) measurements. The measured C-V characteristics showed strong dependences on the bias voltage and frequency. The interface state densities from the I-V characteristics were found to vary from 1.72 × 1013 eV-1cm-2 at E C-0.32 eV to 1.68 × 1012 eV-1cm-2 at E C-0.54 eV. The interface state densities from the conductance-frequency (G/ω - f) characteristics also were within this range. The series resistance vs. voltage (R S - V) plot showed a peak in the small forward bias region (0 ∼ 0.5 V), which was attributed to the contribution of interface states to the series resistance.

AB - The effect of interfaces states on the electrical properties in Ag/m-plane ZnO Schottky contacts was investigated using both current-voltage (I-V) and capacitance-voltage (C-V) measurements. The measured C-V characteristics showed strong dependences on the bias voltage and frequency. The interface state densities from the I-V characteristics were found to vary from 1.72 × 1013 eV-1cm-2 at E C-0.32 eV to 1.68 × 1012 eV-1cm-2 at E C-0.54 eV. The interface state densities from the conductance-frequency (G/ω - f) characteristics also were within this range. The series resistance vs. voltage (R S - V) plot showed a peak in the small forward bias region (0 ∼ 0.5 V), which was attributed to the contribution of interface states to the series resistance.

KW - Interface states

KW - m-plane ZnO

KW - Series resistance

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ER -

Analysis of interface states and series resistance in Ag/m-plane ZnO Schottky diodes

Abstract

Bibliographical note

Keywords

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