Analysis of interface states and series resistance in Ag/m-plane ZnO Schottky diodes

Hogyoung Kim, Haeri Kim, Dong Wook Kim

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6 Scopus citations


The effect of interfaces states on the electrical properties in Ag/m-plane ZnO Schottky contacts was investigated using both current-voltage (I-V) and capacitance-voltage (C-V) measurements. The measured C-V characteristics showed strong dependences on the bias voltage and frequency. The interface state densities from the I-V characteristics were found to vary from 1.72 × 1013 eV-1cm-2 at E C-0.32 eV to 1.68 × 1012 eV-1cm-2 at E C-0.54 eV. The interface state densities from the conductance-frequency (G/ω - f) characteristics also were within this range. The series resistance vs. voltage (R S - V) plot showed a peak in the small forward bias region (0 ∼ 0.5 V), which was attributed to the contribution of interface states to the series resistance.

Original languageEnglish
Pages (from-to)2034-2038
Number of pages5
JournalJournal of the Korean Physical Society
Issue number10
StatePublished - 2013

Bibliographical note

Funding Information:
This work was supported in part by the Energy Efficiency & Resources Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP, No. 2011T100200286) funded by the Ministry of Knowledge Economy (MKE).


  • Interface states
  • m-plane ZnO
  • Series resistance


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