Abstract
In this paper, the transfer characteristic of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) under the mechanical bending stress is analyzed using technology of computer-added design (TCAD). For effective analysis, active layer is divided into two regions of intensive and normal strain with different density of state (DOS) parameter set. Also, the allocation of multi-regions varies by the bending axis based on the stress distribution in channel. Simulation result accounts for the different tendency of degradation according to bending axis and fits well with the measurement. Based on the analysis of the bending axis dependency, we suggest TCAD 3D simulation guideline for hump effect in transfer characteristic under the tensile stress.
| Original language | English |
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| Title of host publication | 2021 International Conference on Electronics, Information, and Communication, ICEIC 2021 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781728191614 |
| DOIs | |
| State | Published - 31 Jan 2021 |
| Event | 2021 International Conference on Electronics, Information, and Communication, ICEIC 2021 - Jeju, Korea, Republic of Duration: 31 Jan 2021 → 3 Feb 2021 |
Publication series
| Name | 2021 International Conference on Electronics, Information, and Communication, ICEIC 2021 |
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Conference
| Conference | 2021 International Conference on Electronics, Information, and Communication, ICEIC 2021 |
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| Country/Territory | Korea, Republic of |
| City | Jeju |
| Period | 31/01/21 → 3/02/21 |
Bibliographical note
Funding Information:ACKNOWLEDGMENT This research was funded by the National Research Foundation of Korea (NRF) (NRF-2019R1A2C1084063).
Publisher Copyright:
© 2021 IEEE.
Keywords
- 3D
- A-IGZO
- Bending axis
- Hump
- Simulation
- Tensile stress
- TFT