Analysis of hump effect in tensile-stressed a-IGZO TFT using TCAD simulation

Yun Yeong Choi, Ji Sun Park, Hyung Soon Shin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, the transfer characteristic of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) under the mechanical bending stress is analyzed using technology of computer-added design (TCAD). For effective analysis, active layer is divided into two regions of intensive and normal strain with different density of state (DOS) parameter set. Also, the allocation of multi-regions varies by the bending axis based on the stress distribution in channel. Simulation result accounts for the different tendency of degradation according to bending axis and fits well with the measurement. Based on the analysis of the bending axis dependency, we suggest TCAD 3D simulation guideline for hump effect in transfer characteristic under the tensile stress.

Original languageEnglish
Title of host publication2021 International Conference on Electronics, Information, and Communication, ICEIC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728191614
DOIs
StatePublished - 31 Jan 2021
Event2021 International Conference on Electronics, Information, and Communication, ICEIC 2021 - Jeju, Korea, Republic of
Duration: 31 Jan 20213 Feb 2021

Publication series

Name2021 International Conference on Electronics, Information, and Communication, ICEIC 2021

Conference

Conference2021 International Conference on Electronics, Information, and Communication, ICEIC 2021
Country/TerritoryKorea, Republic of
CityJeju
Period31/01/213/02/21

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This research was funded by the National Research Foundation of Korea (NRF) (NRF-2019R1A2C1084063).

Publisher Copyright:
© 2021 IEEE.

Keywords

  • 3D
  • A-IGZO
  • Bending axis
  • Hump
  • Simulation
  • Tensile stress
  • TFT

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