Analysis of current transport properties in nonpolar a-plane ZnO-based Schottky diodes

Hogyoung Kim; Haeri Kim; Dong Wook Kim

doi:10.3938/jkps.65.751

Analysis of current transport properties in nonpolar a-plane ZnO-based Schottky diodes

Hogyoung Kim, Haeri Kim, Dong Wook Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Using current-voltage (I–V) measurements, we investigated the temperature-dependent transport properties in Ag/nonpolar a-plane ZnO Schottky diodes. The bias-dependent ideality factors were altered by the different temperatures and showed a hump at lower temperatures. The series resistance of the diode depended on the temperatures, which was related to the number of free carriers contributing to the series resistance. For high forward bias, the slope m obtained from the lnI–lnV curves decreased with increasing temperature, assuring the space-charge-limited-current (SCLC) model controlled by an exponential distribution of traps. The reverse-biased current transport was associated with the Schottky effect, with a thermally-assisted tunneling for lower voltages and the Poole-Frenkel effect for higher voltages. The density of localized states (N_t) was obtained by applying the theory of SCLC transport, which yielded a N_t value of 8.32 × 10¹¹ eV⁻¹cm⁻³.

Original language	English
Pages (from-to)	751-756
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	65
Issue number	5
DOIs	https://doi.org/10.3938/jkps.65.751
State	Published - 1 Sep 2014

Bibliographical note

Publisher Copyright:
© 2014, The Korean Physical Society.

Keywords

Density of localized states
Ideality factors
Transport properties

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10.3938/jkps.65.751

Cite this

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title = "Analysis of current transport properties in nonpolar a-plane ZnO-based Schottky diodes",

abstract = "Using current-voltage (I–V) measurements, we investigated the temperature-dependent transport properties in Ag/nonpolar a-plane ZnO Schottky diodes. The bias-dependent ideality factors were altered by the different temperatures and showed a hump at lower temperatures. The series resistance of the diode depended on the temperatures, which was related to the number of free carriers contributing to the series resistance. For high forward bias, the slope m obtained from the lnI–lnV curves decreased with increasing temperature, assuring the space-charge-limited-current (SCLC) model controlled by an exponential distribution of traps. The reverse-biased current transport was associated with the Schottky effect, with a thermally-assisted tunneling for lower voltages and the Poole-Frenkel effect for higher voltages. The density of localized states (Nt) was obtained by applying the theory of SCLC transport, which yielded a Nt value of 8.32 × 1011 eV−1cm−3.",

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N2 - Using current-voltage (I–V) measurements, we investigated the temperature-dependent transport properties in Ag/nonpolar a-plane ZnO Schottky diodes. The bias-dependent ideality factors were altered by the different temperatures and showed a hump at lower temperatures. The series resistance of the diode depended on the temperatures, which was related to the number of free carriers contributing to the series resistance. For high forward bias, the slope m obtained from the lnI–lnV curves decreased with increasing temperature, assuring the space-charge-limited-current (SCLC) model controlled by an exponential distribution of traps. The reverse-biased current transport was associated with the Schottky effect, with a thermally-assisted tunneling for lower voltages and the Poole-Frenkel effect for higher voltages. The density of localized states (Nt) was obtained by applying the theory of SCLC transport, which yielded a Nt value of 8.32 × 1011 eV−1cm−3.

AB - Using current-voltage (I–V) measurements, we investigated the temperature-dependent transport properties in Ag/nonpolar a-plane ZnO Schottky diodes. The bias-dependent ideality factors were altered by the different temperatures and showed a hump at lower temperatures. The series resistance of the diode depended on the temperatures, which was related to the number of free carriers contributing to the series resistance. For high forward bias, the slope m obtained from the lnI–lnV curves decreased with increasing temperature, assuring the space-charge-limited-current (SCLC) model controlled by an exponential distribution of traps. The reverse-biased current transport was associated with the Schottky effect, with a thermally-assisted tunneling for lower voltages and the Poole-Frenkel effect for higher voltages. The density of localized states (Nt) was obtained by applying the theory of SCLC transport, which yielded a Nt value of 8.32 × 1011 eV−1cm−3.

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Analysis of current transport properties in nonpolar a-plane ZnO-based Schottky diodes

Abstract

Bibliographical note

Keywords

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