Analysis of current transport properties in nonpolar a-plane ZnO-based Schottky diodes

Hogyoung Kim, Haeri Kim, Dong Wook Kim

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6 Scopus citations


Using current-voltage (I–V) measurements, we investigated the temperature-dependent transport properties in Ag/nonpolar a-plane ZnO Schottky diodes. The bias-dependent ideality factors were altered by the different temperatures and showed a hump at lower temperatures. The series resistance of the diode depended on the temperatures, which was related to the number of free carriers contributing to the series resistance. For high forward bias, the slope m obtained from the lnI–lnV curves decreased with increasing temperature, assuring the space-charge-limited-current (SCLC) model controlled by an exponential distribution of traps. The reverse-biased current transport was associated with the Schottky effect, with a thermally-assisted tunneling for lower voltages and the Poole-Frenkel effect for higher voltages. The density of localized states (Nt) was obtained by applying the theory of SCLC transport, which yielded a Nt value of 8.32 × 1011 eV−1cm−3.

Original languageEnglish
Pages (from-to)751-756
Number of pages6
JournalJournal of the Korean Physical Society
Issue number5
StatePublished - 1 Sep 2014

Bibliographical note

Publisher Copyright:
© 2014, The Korean Physical Society.


  • Density of localized states
  • Ideality factors
  • Transport properties


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