Analyses on ZnO/CdS heterojunction for design of CIGS photovoltaic device with higher accuracy

Hana Sim; Seong Min Lee; Seongjae Cho; Eou Sik Cho; Sang Jik Kwon

doi:10.1109/ISCE.2014.6884476

Analyses on ZnO/CdS heterojunction for design of CIGS photovoltaic device with higher accuracy

Hana Sim
, Seong Min Lee
, Seongjae Cho
, Eou Sik Cho
, Sang Jik Kwon

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form a ZnO/CdS heterojunction in the Cu(In, Ga)Se₂ (CIGS) solar cell. More accurate mapping of band arrangement in the ZnO/CdS heterojunction has been performed by studying both its electrical and optical characteristics in depth by various analysis methods including transmittance, sheet resistivity measurement, and photoemission spectroscopies. Energy-band structures of the ZnO/CdS heterojunction could be accurately drawn from the extracted parameters taking the conduction band offset (CBO) into account. Consequently, a delicate description of the energy-band structure of the heterojunction has been made possible in this study, which would help acquisition of the full band structures of the thin films in the CIGS solar cell device and contribute to its reliable design with higher accuracy.

Original language	English
Title of host publication	ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479945924
DOIs	https://doi.org/10.1109/ISCE.2014.6884476
State	Published - 2014
Event	18th IEEE International Symposium on Consumer Electronics, ISCE 2014 - Jeju, Korea, Republic of Duration: 22 Jun 2014 → 25 Jun 2014

Publication series

Name	Proceedings of the International Symposium on Consumer Electronics, ISCE

Conference

Conference	18th IEEE International Symposium on Consumer Electronics, ISCE 2014
Country/Territory	Korea, Republic of
City	Jeju
Period	22/06/14 → 25/06/14

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

CIGS
ZnO
atomic layer deposition
chemical bath deposition
conduction band offset
heterojunction
solar cell

Access to Document

10.1109/ISCE.2014.6884476

Cite this

Sim, H., Lee, S. M., Cho, S., Cho, E. S., & Kwon, S. J. (2014). Analyses on ZnO/CdS heterojunction for design of CIGS photovoltaic device with higher accuracy. In ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics Article 6884476 (Proceedings of the International Symposium on Consumer Electronics, ISCE). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCE.2014.6884476

@inproceedings{4e2809ee2a7e4b6c951f38f55a74e3f9,

title = "Analyses on ZnO/CdS heterojunction for design of CIGS photovoltaic device with higher accuracy",

abstract = "In this work, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form a ZnO/CdS heterojunction in the Cu(In, Ga)Se2 (CIGS) solar cell. More accurate mapping of band arrangement in the ZnO/CdS heterojunction has been performed by studying both its electrical and optical characteristics in depth by various analysis methods including transmittance, sheet resistivity measurement, and photoemission spectroscopies. Energy-band structures of the ZnO/CdS heterojunction could be accurately drawn from the extracted parameters taking the conduction band offset (CBO) into account. Consequently, a delicate description of the energy-band structure of the heterojunction has been made possible in this study, which would help acquisition of the full band structures of the thin films in the CIGS solar cell device and contribute to its reliable design with higher accuracy.",

keywords = "CIGS, ZnO, atomic layer deposition, chemical bath deposition, conduction band offset, heterojunction, solar cell",

author = "Hana Sim and Lee, \{Seong Min\} and Seongjae Cho and Cho, \{Eou Sik\} and Kwon, \{Sang Jik\}",

year = "2014",

doi = "10.1109/ISCE.2014.6884476",

language = "English",

isbn = "9781479945924",

series = "Proceedings of the International Symposium on Consumer Electronics, ISCE",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics",

note = "18th IEEE International Symposium on Consumer Electronics, ISCE 2014 ; Conference date: 22-06-2014 Through 25-06-2014",

}

Sim, H, Lee, SM, Cho, S, Cho, ES & Kwon, SJ 2014, Analyses on ZnO/CdS heterojunction for design of CIGS photovoltaic device with higher accuracy. in ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics., 6884476, Proceedings of the International Symposium on Consumer Electronics, ISCE, Institute of Electrical and Electronics Engineers Inc., 18th IEEE International Symposium on Consumer Electronics, ISCE 2014, Jeju, Korea, Republic of, 22/06/14. https://doi.org/10.1109/ISCE.2014.6884476

Analyses on ZnO/CdS heterojunction for design of CIGS photovoltaic device with higher accuracy. / Sim, Hana; Lee, Seong Min; Cho, Seongjae et al.
ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics. Institute of Electrical and Electronics Engineers Inc., 2014. 6884476 (Proceedings of the International Symposium on Consumer Electronics, ISCE).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Analyses on ZnO/CdS heterojunction for design of CIGS photovoltaic device with higher accuracy

AU - Sim, Hana

AU - Lee, Seong Min

AU - Cho, Seongjae

AU - Cho, Eou Sik

AU - Kwon, Sang Jik

PY - 2014

Y1 - 2014

N2 - In this work, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form a ZnO/CdS heterojunction in the Cu(In, Ga)Se2 (CIGS) solar cell. More accurate mapping of band arrangement in the ZnO/CdS heterojunction has been performed by studying both its electrical and optical characteristics in depth by various analysis methods including transmittance, sheet resistivity measurement, and photoemission spectroscopies. Energy-band structures of the ZnO/CdS heterojunction could be accurately drawn from the extracted parameters taking the conduction band offset (CBO) into account. Consequently, a delicate description of the energy-band structure of the heterojunction has been made possible in this study, which would help acquisition of the full band structures of the thin films in the CIGS solar cell device and contribute to its reliable design with higher accuracy.

AB - In this work, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form a ZnO/CdS heterojunction in the Cu(In, Ga)Se2 (CIGS) solar cell. More accurate mapping of band arrangement in the ZnO/CdS heterojunction has been performed by studying both its electrical and optical characteristics in depth by various analysis methods including transmittance, sheet resistivity measurement, and photoemission spectroscopies. Energy-band structures of the ZnO/CdS heterojunction could be accurately drawn from the extracted parameters taking the conduction band offset (CBO) into account. Consequently, a delicate description of the energy-band structure of the heterojunction has been made possible in this study, which would help acquisition of the full band structures of the thin films in the CIGS solar cell device and contribute to its reliable design with higher accuracy.

KW - CIGS

KW - ZnO

KW - atomic layer deposition

KW - chemical bath deposition

KW - conduction band offset

KW - heterojunction

KW - solar cell

UR - https://www.scopus.com/pages/publications/84907412967

U2 - 10.1109/ISCE.2014.6884476

DO - 10.1109/ISCE.2014.6884476

M3 - Conference contribution

AN - SCOPUS:84907412967

SN - 9781479945924

T3 - Proceedings of the International Symposium on Consumer Electronics, ISCE

BT - ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 18th IEEE International Symposium on Consumer Electronics, ISCE 2014

Y2 - 22 June 2014 through 25 June 2014

ER -

Sim H, Lee SM, Cho S, Cho ES, Kwon SJ. Analyses on ZnO/CdS heterojunction for design of CIGS photovoltaic device with higher accuracy. In ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics. Institute of Electrical and Electronics Engineers Inc. 2014. 6884476. (Proceedings of the International Symposium on Consumer Electronics, ISCE). doi: 10.1109/ISCE.2014.6884476

Analyses on ZnO/CdS heterojunction for design of CIGS photovoltaic device with higher accuracy

Abstract

Publication series

Conference

UN SDGs

Keywords

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