Analyses on ZnO/CdS heterojunction for design of CIGS photovoltaic device with higher accuracy

Hana Sim, Seong Min Lee, Seongjae Cho, Eou Sik Cho, Sang Jik Kwon

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form a ZnO/CdS heterojunction in the Cu(In, Ga)Se2 (CIGS) solar cell. More accurate mapping of band arrangement in the ZnO/CdS heterojunction has been performed by studying both its electrical and optical characteristics in depth by various analysis methods including transmittance, sheet resistivity measurement, and photoemission spectroscopies. Energy-band structures of the ZnO/CdS heterojunction could be accurately drawn from the extracted parameters taking the conduction band offset (CBO) into account. Consequently, a delicate description of the energy-band structure of the heterojunction has been made possible in this study, which would help acquisition of the full band structures of the thin films in the CIGS solar cell device and contribute to its reliable design with higher accuracy.

Original languageEnglish
Title of host publicationISCE 2014 - 18th IEEE International Symposium on Consumer Electronics
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479945924
DOIs
StatePublished - 2014
Event18th IEEE International Symposium on Consumer Electronics, ISCE 2014 - Jeju, Korea, Republic of
Duration: 22 Jun 201425 Jun 2014

Publication series

NameProceedings of the International Symposium on Consumer Electronics, ISCE

Conference

Conference18th IEEE International Symposium on Consumer Electronics, ISCE 2014
Country/TerritoryKorea, Republic of
CityJeju
Period22/06/1425/06/14

Keywords

  • CIGS
  • ZnO
  • atomic layer deposition
  • chemical bath deposition
  • conduction band offset
  • heterojunction
  • solar cell

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