Abstract
The small-signal parameters of gate-all-around tunneling field-effect transistors (GAA TFETs) with different gate lengths were extracted and analyzed in terms of their gate capacitance, source-drain conductance, transconductance, distributed channel resistance, and inversion layer length. Because of the unique current drive and inversion layer formation mechanisms of a TFET compared to a conventional MOSFET, the gate-bias dependence values of the primary small-signal parameters of a GAA TFET also differ. Based on understanding these parameters, the high-frequency performances of GAA TFETs were investigated using a technology computer-aided design simulation. A nonquasi-static radio-frequency model was used to extract the small-signal parameters, which were verified up to 100 GHz. The modeling results showed excellent agreement with the Y -parameters up to the cutoff frequency fT.
| Original language | English |
|---|---|
| Article number | 6043869 |
| Pages (from-to) | 4164-4171 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 58 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 2011 |
Bibliographical note
Funding Information:Manuscript received June 28, 2011; revised August 15, 2011, August 23, 2011 and August 26, 2011; accepted August 30, 2011. Date of publication October 13, 2011; date of current version November 23, 2011. This research was supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Korean Ministry of Education, Science and Technology (2011-0025701) and in part by Sam-sung Electronics Co., Ltd. The review of this paper was arranged by Editor V. R. Rao.
Keywords
- Gate-all-around (GAA)
- modeling
- nonquasi-static (NQS)
- radio-frequency (RF)
- small-signal parameters
- technology computer-aided design (TCAD)
- tunneling field-effect transistor (TFET)