Analyses on RF performances of silicon-compatible InGaAs-based planar-type and fin-type junctionless field-effect transistors

The In_0.53Ga_0.47As-based planar-type junctionless fieled-effect transistor (JLFET) and fin-type FET (FinFET) have been designed and characterized by technology computer-aided design (TCAD) simulations. Because of their attractive material characteristics, the combination of In_0.53Ga_0.47As and InP has been adopted in some of the most recent semiconductor devices. In particular, the In_0.53Ga_0.47As-based transistor using an InP buffer is highly attractive due to its superior electrostatic performance which results from the by particular characteristics of the In_0.53Ga_0.47As material. In this paper, we focus on using small-signal RF modeling and Y-parameter extraction methods th extract various RF characteristics, such as gate capacitance, transconductance (g_m), cut-off frequency (f_T), and maximum oscillation frequency (f_max). The proposed In_0.53Ga_0.47As-based FinFET exhibits an on-state current (I_on) of 1030 μA/μm and an off-state current (I_off) of 1.2 × 10^-13 A/μm with a threshold voltage (V_th) of 0.1 V, and a subthreshold swing (S) of 96 mV/dec. In addition, f_T and f_max are determined to be 243 GHz and 1.6 THz, respectively.