An Optoelectronic Transimpedance Amplifier in 180-nm CMOS for Short-range LiDAR Sensors

Yu Hu, Ji Eun Joo, Myung Jae Lee, Sung Min Park

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

—This paper presents an optoelectronic transimpedance amplifier (OTIA) implemented in a 180-nm CMOS technology, in which a P+ /N-well avalanche photodiode (APD) is realized on-chip to reduce signal distortions occurring from bond-wire and I/O pad at the input node, a voltage-mode feedforward input configuration is exploited to boost the transimpedance gain, and a cross-coupled inverter-based post-amplifier (CI-PA) is added to reduce the mismatches from the previous stage. The proposed OTIA demonstrate 95.1-dBΩ transimpedance gain, 608-MHz bandwidth, 4.54-pA/√Hz noise current spectral density, 26.4-dB dynamic range that corresponds to the input currents of 2.38 μApp ~ 50 μApp, and 39.3-mW power dissipation from a single 1.8-V supply. The chip core occupies the area of 0.068 mm2.

Original languageEnglish
Pages (from-to)275-281
Number of pages7
JournalJournal of Semiconductor Technology and Science
Volume22
Issue number4
DOIs
StatePublished - Aug 2022

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2020R1A2C1008879). This research was supported by the MSIT (Ministry of Science, ICT), Korea, under the High-Potential Individuals Global Training Program) (2021-0-02133) supervised by the IITP (Institute for Information & Communications Technology Planning & Evaluation). This work was supported by the National Research Foundation (NRF), Korea, under project BK21 FOUR. The EDA tool and chip fabrication were supported by the IC Design Education Center.

Publisher Copyright:
© 2022, Institute of Electronics Engineers of Korea. All rights reserved.

Keywords

  • CMOS
  • cross-coupled
  • feedforward
  • optoelectronic
  • TIA

Fingerprint

Dive into the research topics of 'An Optoelectronic Transimpedance Amplifier in 180-nm CMOS for Short-range LiDAR Sensors'. Together they form a unique fingerprint.

Cite this