An Improved I-V model for Resistive Random Access Memory

Harry Chung, Hyungsoon Shin, Wookyung Sun, Jisun Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, we performed a simulation for a physical resistive random-access device (RRAM) to propose an improved model representing its electrical characteristics. Voltage ThrEshold Adaptive Memristor (VTEAM) model that operates based on the voltage threshold of the device adapted for the RRAM simulation. We applied some physical features to the model to adjust the internal state variable to improve the simulation results. The internal state variable used in the model was designed after the physical feature such as the distance between the end of the filament and the electrode of the device. Therefore, applying some of these physical conditions affects the simulation results. Simulation results with the newly applied model showed optimized I-V characteristics that resemble the physical device's behavior more than the existing model.

Original languageEnglish
Title of host publicationInternational Conference on Electrical, Computer, and Energy Technologies, ICECET 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665470872
DOIs
StatePublished - 2022
Event2022 IEEE International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022 - Prague, Czech Republic
Duration: 20 Jul 202222 Jul 2022

Publication series

NameInternational Conference on Electrical, Computer, and Energy Technologies, ICECET 2022

Conference

Conference2022 IEEE International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022
Country/TerritoryCzech Republic
CityPrague
Period20/07/2222/07/22

Keywords

  • HSPICE
  • memristive device
  • memristor
  • Resistive random-access memory (RRAM)
  • Resistive switching
  • simulation
  • VTEAM

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