An Improved I-V model for Resistive Random Access Memory

Harry Chung; Hyungsoon Shin; Wookyung Sun; Jisun Park

doi:10.1109/ICECET55527.2022.9873017

An Improved I-V model for Resistive Random Access Memory

Harry Chung, Hyungsoon Shin, Wookyung Sun, Jisun Park

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this paper, we performed a simulation for a physical resistive random-access device (RRAM) to propose an improved model representing its electrical characteristics. Voltage ThrEshold Adaptive Memristor (VTEAM) model that operates based on the voltage threshold of the device adapted for the RRAM simulation. We applied some physical features to the model to adjust the internal state variable to improve the simulation results. The internal state variable used in the model was designed after the physical feature such as the distance between the end of the filament and the electrode of the device. Therefore, applying some of these physical conditions affects the simulation results. Simulation results with the newly applied model showed optimized I-V characteristics that resemble the physical device's behavior more than the existing model.

Original language	English
Title of host publication	International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665470872
DOIs	https://doi.org/10.1109/ICECET55527.2022.9873017
State	Published - 2022
Event	2022 IEEE International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022 - Prague, Czech Republic Duration: 20 Jul 2022 → 22 Jul 2022

Publication series

Name	International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022

Conference

Conference	2022 IEEE International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022
Country/Territory	Czech Republic
City	Prague
Period	20/07/22 → 22/07/22

Bibliographical note

Funding Information:
This research was funded by the National Research Foundation of Korea (NRF) (NRF-2020R1I1A1A01065622) and the BK21-Four Program.

Publisher Copyright:
© 2022 IEEE.

Keywords

HSPICE
memristive device
memristor
Resistive random-access memory (RRAM)
Resistive switching
simulation
VTEAM

Access to Document

10.1109/ICECET55527.2022.9873017

Cite this

Chung, H., Shin, H., Sun, W., & Park, J. (2022). An Improved I-V model for Resistive Random Access Memory. In International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022 (International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICECET55527.2022.9873017

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title = "An Improved I-V model for Resistive Random Access Memory",

abstract = "In this paper, we performed a simulation for a physical resistive random-access device (RRAM) to propose an improved model representing its electrical characteristics. Voltage ThrEshold Adaptive Memristor (VTEAM) model that operates based on the voltage threshold of the device adapted for the RRAM simulation. We applied some physical features to the model to adjust the internal state variable to improve the simulation results. The internal state variable used in the model was designed after the physical feature such as the distance between the end of the filament and the electrode of the device. Therefore, applying some of these physical conditions affects the simulation results. Simulation results with the newly applied model showed optimized I-V characteristics that resemble the physical device's behavior more than the existing model.",

keywords = "HSPICE, memristive device, memristor, Resistive random-access memory (RRAM), Resistive switching, simulation, VTEAM",

author = "Harry Chung and Hyungsoon Shin and Wookyung Sun and Jisun Park",

note = "Funding Information: This research was funded by the National Research Foundation of Korea (NRF) (NRF-2020R1I1A1A01065622) and the BK21-Four Program. Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022 ; Conference date: 20-07-2022 Through 22-07-2022",

year = "2022",

doi = "10.1109/ICECET55527.2022.9873017",

language = "English",

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Chung, H, Shin, H, Sun, W & Park, J 2022, An Improved I-V model for Resistive Random Access Memory. in International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022. International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022, Prague, Czech Republic, 20/07/22. https://doi.org/10.1109/ICECET55527.2022.9873017

An Improved I-V model for Resistive Random Access Memory. / Chung, Harry; Shin, Hyungsoon; Sun, Wookyung et al.
International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - In this paper, we performed a simulation for a physical resistive random-access device (RRAM) to propose an improved model representing its electrical characteristics. Voltage ThrEshold Adaptive Memristor (VTEAM) model that operates based on the voltage threshold of the device adapted for the RRAM simulation. We applied some physical features to the model to adjust the internal state variable to improve the simulation results. The internal state variable used in the model was designed after the physical feature such as the distance between the end of the filament and the electrode of the device. Therefore, applying some of these physical conditions affects the simulation results. Simulation results with the newly applied model showed optimized I-V characteristics that resemble the physical device's behavior more than the existing model.

AB - In this paper, we performed a simulation for a physical resistive random-access device (RRAM) to propose an improved model representing its electrical characteristics. Voltage ThrEshold Adaptive Memristor (VTEAM) model that operates based on the voltage threshold of the device adapted for the RRAM simulation. We applied some physical features to the model to adjust the internal state variable to improve the simulation results. The internal state variable used in the model was designed after the physical feature such as the distance between the end of the filament and the electrode of the device. Therefore, applying some of these physical conditions affects the simulation results. Simulation results with the newly applied model showed optimized I-V characteristics that resemble the physical device's behavior more than the existing model.

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An Improved I-V model for Resistive Random Access Memory

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