An Improved I-V model for Resistive Random Access Memory

Abstract

In this paper, we performed a simulation for a physical resistive random-access device (RRAM) to propose an improved model representing its electrical characteristics. Voltage ThrEshold Adaptive Memristor (VTEAM) model that operates based on the voltage threshold of the device adapted for the RRAM simulation. We applied some physical features to the model to adjust the internal state variable to improve the simulation results. The internal state variable used in the model was designed after the physical feature such as the distance between the end of the filament and the electrode of the device. Therefore, applying some of these physical conditions affects the simulation results. Simulation results with the newly applied model showed optimized I-V characteristics that resemble the physical device's behavior more than the existing model.

Bibliographical note

Funding Information:
This research was funded by the National Research Foundation of Korea (NRF) (NRF-2020R1I1A1A01065622) and the BK21-Four Program.

Publisher Copyright:
© 2022 IEEE.

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10.1109/ICECET55527.2022.9873017

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Chung, H., Shin, H., Sun, W., & Park, J. (2022). An Improved I-V model for Resistive Random Access Memory. In International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022 (International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICECET55527.2022.9873017

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title = "An Improved I-V model for Resistive Random Access Memory",

abstract = "In this paper, we performed a simulation for a physical resistive random-access device (RRAM) to propose an improved model representing its electrical characteristics. Voltage ThrEshold Adaptive Memristor (VTEAM) model that operates based on the voltage threshold of the device adapted for the RRAM simulation. We applied some physical features to the model to adjust the internal state variable to improve the simulation results. The internal state variable used in the model was designed after the physical feature such as the distance between the end of the filament and the electrode of the device. Therefore, applying some of these physical conditions affects the simulation results. Simulation results with the newly applied model showed optimized I-V characteristics that resemble the physical device's behavior more than the existing model.",

keywords = "HSPICE, memristive device, memristor, Resistive random-access memory (RRAM), Resistive switching, simulation, VTEAM",

author = "Harry Chung and Hyungsoon Shin and Wookyung Sun and Jisun Park",

note = "Funding Information: This research was funded by the National Research Foundation of Korea (NRF) (NRF-2020R1I1A1A01065622) and the BK21-Four Program. Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022 ; Conference date: 20-07-2022 Through 22-07-2022",

year = "2022",

doi = "10.1109/ICECET55527.2022.9873017",

language = "English",

series = "International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022",

}

Chung, H, Shin, H, Sun, W & Park, J 2022, An Improved I-V model for Resistive Random Access Memory. in International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022. International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022, Prague, Czech Republic, 20/07/22. https://doi.org/10.1109/ICECET55527.2022.9873017

TY - GEN

T1 - An Improved I-V model for Resistive Random Access Memory

AU - Chung, Harry

AU - Shin, Hyungsoon

AU - Sun, Wookyung

AU - Park, Jisun

PY - 2022

Y1 - 2022

N2 - In this paper, we performed a simulation for a physical resistive random-access device (RRAM) to propose an improved model representing its electrical characteristics. Voltage ThrEshold Adaptive Memristor (VTEAM) model that operates based on the voltage threshold of the device adapted for the RRAM simulation. We applied some physical features to the model to adjust the internal state variable to improve the simulation results. The internal state variable used in the model was designed after the physical feature such as the distance between the end of the filament and the electrode of the device. Therefore, applying some of these physical conditions affects the simulation results. Simulation results with the newly applied model showed optimized I-V characteristics that resemble the physical device's behavior more than the existing model.

AB - In this paper, we performed a simulation for a physical resistive random-access device (RRAM) to propose an improved model representing its electrical characteristics. Voltage ThrEshold Adaptive Memristor (VTEAM) model that operates based on the voltage threshold of the device adapted for the RRAM simulation. We applied some physical features to the model to adjust the internal state variable to improve the simulation results. The internal state variable used in the model was designed after the physical feature such as the distance between the end of the filament and the electrode of the device. Therefore, applying some of these physical conditions affects the simulation results. Simulation results with the newly applied model showed optimized I-V characteristics that resemble the physical device's behavior more than the existing model.

KW - HSPICE

KW - memristive device

KW - memristor

KW - Resistive random-access memory (RRAM)

KW - Resistive switching

KW - simulation

KW - VTEAM

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U2 - 10.1109/ICECET55527.2022.9873017

DO - 10.1109/ICECET55527.2022.9873017

M3 - Conference contribution

AN - SCOPUS:85138912729

T3 - International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022

BT - International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE International Conference on Electrical, Computer, and Energy Technologies, ICECET 2022

Y2 - 20 July 2022 through 22 July 2022

ER -

An Improved I-V model for Resistive Random Access Memory

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