TY - GEN
T1 - An experimental and simulation study of arsenic diffusion behavior in point defect engineered silicon
AU - Kong, Ning
AU - Kirichenko, Taras A.
AU - Hwang, Gyeong S.
AU - Mark, Foisy C.
AU - Anderson, Steven G.H.
AU - Banerjee, Sanjay K.
PY - 2007
Y1 - 2007
N2 - We report that arsenic diffusion can be enhanced and retarded by surrounding interstitial rich and vacancy rich environments created by Si point defect engineering implant. The enhancement and retardation can be attributed to the dominant arsenic interstitial diffusion mechanism during post-implant anneal. Kinetic Monte Carlo simulations with newly implemented models show good match with experiments. Our study suggests the importance of arsenic interstitial mechanism and a possible approach for n-type ultra shallow junction fabrication.
AB - We report that arsenic diffusion can be enhanced and retarded by surrounding interstitial rich and vacancy rich environments created by Si point defect engineering implant. The enhancement and retardation can be attributed to the dominant arsenic interstitial diffusion mechanism during post-implant anneal. Kinetic Monte Carlo simulations with newly implemented models show good match with experiments. Our study suggests the importance of arsenic interstitial mechanism and a possible approach for n-type ultra shallow junction fabrication.
UR - http://www.scopus.com/inward/record.url?scp=45749142792&partnerID=8YFLogxK
U2 - 10.1557/proc-0994-f10-02
DO - 10.1557/proc-0994-f10-02
M3 - Conference contribution
AN - SCOPUS:45749142792
SN - 9781558999541
T3 - Materials Research Society Symposium Proceedings
SP - 307
EP - 313
BT - Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
PB - Materials Research Society
T2 - Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
Y2 - 9 April 2007 through 13 April 2007
ER -