An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect

Kyu Il Lee; Chanho Lee; Hyungsoon Shin; Young June Park; Hong Shick Min

doi:10.1109/SISPAD.2003.1233679

An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect

Kyu Il Lee, Chanho Lee, Hyungsoon Shin, Young June Park, Hong Shick Min

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, we propose an efficient method for the harmonic balance analysis of the short channel MOSFET including the non-quasistatic effect Our method is based on the charge-sheet model in the linear region and assumes that the saturation region is modulated by the external voltage instantaneously. By comparing with the current responses under large signal conditions obtained from the time-dependent two-dimensional simulator (MEDICI), it is confirmed that the proposed method is efficient and accurate for the frequency-domain analysis of the short channel MOSFET in the 0.1 μm regime.

Original language	English
Title of host publication	SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	231-234
Number of pages	4
ISBN (Electronic)	0780378261
DOIs	https://doi.org/10.1109/SISPAD.2003.1233679
State	Published - 2003
Event	2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, United States Duration: 3 Sep 2003 → 5 Sep 2003

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2003-January

Conference

Conference	2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
Country/Territory	United States
City	Boston
Period	3/09/03 → 5/09/03

Bibliographical note

Publisher Copyright:
© 2003 IEEE.

Keywords

Analytical models
CMOS technology
Circuit simulation
Computational modeling
Distortion
Frequency domain analysis
Harmonic analysis
MOSFET circuits
Semiconductor device modeling
Time domain analysis

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10.1109/SISPAD.2003.1233679

Cite this

Lee, K. I., Lee, C., Shin, H., Park, Y. J., & Min, H. S. (2003). An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (pp. 231-234). Article 1233679 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2003.1233679

Lee, Kyu Il ; Lee, Chanho ; Shin, Hyungsoon et al. / An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect. SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 231-234 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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title = "An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect",

abstract = "In this paper, we propose an efficient method for the harmonic balance analysis of the short channel MOSFET including the non-quasistatic effect Our method is based on the charge-sheet model in the linear region and assumes that the saturation region is modulated by the external voltage instantaneously. By comparing with the current responses under large signal conditions obtained from the time-dependent two-dimensional simulator (MEDICI), it is confirmed that the proposed method is efficient and accurate for the frequency-domain analysis of the short channel MOSFET in the 0.1 μm regime.",

keywords = "Analytical models, CMOS technology, Circuit simulation, Computational modeling, Distortion, Frequency domain analysis, Harmonic analysis, MOSFET circuits, Semiconductor device modeling, Time domain analysis",

author = "Lee, {Kyu Il} and Chanho Lee and Hyungsoon Shin and Park, {Young June} and Min, {Hong Shick}",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 ; Conference date: 03-09-2003 Through 05-09-2003",

year = "2003",

doi = "10.1109/SISPAD.2003.1233679",

language = "English",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

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Lee, KI, Lee, C, Shin, H, Park, YJ & Min, HS 2003, An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect. in SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices., 1233679, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 231-234, 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003, Boston, United States, 3/09/03. https://doi.org/10.1109/SISPAD.2003.1233679

An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect. / Lee, Kyu Il; Lee, Chanho; Shin, Hyungsoon et al.
SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. p. 231-234 1233679 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - In this paper, we propose an efficient method for the harmonic balance analysis of the short channel MOSFET including the non-quasistatic effect Our method is based on the charge-sheet model in the linear region and assumes that the saturation region is modulated by the external voltage instantaneously. By comparing with the current responses under large signal conditions obtained from the time-dependent two-dimensional simulator (MEDICI), it is confirmed that the proposed method is efficient and accurate for the frequency-domain analysis of the short channel MOSFET in the 0.1 μm regime.

KW - Analytical models

KW - CMOS technology

KW - Circuit simulation

KW - Computational modeling

KW - Distortion

KW - Frequency domain analysis

KW - Harmonic analysis

KW - MOSFET circuits

KW - Semiconductor device modeling

KW - Time domain analysis

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BT - SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices

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Lee KI, Lee C, Shin H, Park YJ, Min HS. An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc. 2003. p. 231-234. 1233679. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2003.1233679

An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect

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