@inproceedings{9c95f49fab8c438da276ff0661dab0af,
title = "An efficient method for frequency-domain simulation of short channel MOSFET including the non-quasistatic effect",
abstract = "In this paper, we propose an efficient method for the harmonic balance analysis of the short channel MOSFET including the non-quasistatic effect Our method is based on the charge-sheet model in the linear region and assumes that the saturation region is modulated by the external voltage instantaneously. By comparing with the current responses under large signal conditions obtained from the time-dependent two-dimensional simulator (MEDICI), it is confirmed that the proposed method is efficient and accurate for the frequency-domain analysis of the short channel MOSFET in the 0.1 μm regime.",
keywords = "Analytical models, CMOS technology, Circuit simulation, Computational modeling, Distortion, Frequency domain analysis, Harmonic analysis, MOSFET circuits, Semiconductor device modeling, Time domain analysis",
author = "Lee, {Kyu Il} and Chanho Lee and Hyungsoon Shin and Park, {Young June} and Min, {Hong Shick}",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 ; Conference date: 03-09-2003 Through 05-09-2003",
year = "2003",
doi = "10.1109/SISPAD.2003.1233679",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "231--234",
booktitle = "SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices",
}