An anomalous device degradation of SOI narrow width devices caused by STI edge influence

Hyeokjae Lee; Jong Ho Lee; Hyungsoon Shin; Young June Park; Hong Shick Min

doi:10.1109/16.992869

An anomalous device degradation of SOI narrow width devices caused by STI edge influence

Hyeokjae Lee, Jong Ho Lee, Hyungsoon Shin, Young June Park, Hong Shick Min

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

The effects of shallow trench isolation (STI) on silicon-on-insulator (SOI) devices are investigated for various device sizes with three different gate shapes. Both NMOSFETs and PMOSFETs with the channel region butted to the STI show the reduction of mobility (NMOSFETs and PMOSFETs) and the increase of low-frequency noise as the channel width is reduced. In comparison, the devices without the STI-butted channel region show much less variation in mobility for various channel width. The degradation of MOSFETs' yield in SOI MOSFETs with the STI is found to be dependent on the device width since the contribution of the interface roughness (or damage) between the STI and the channel formed during the dry etch process becomes significant with the decrease of channel width and the increase of channel length. From the charge-pumping results, the interface state (N_it) generated by the STI process was identified as the cause of the anomalous degradation.

Original language	English
Pages (from-to)	605-612
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	49
Issue number	4
DOIs	https://doi.org/10.1109/16.992869
State	Published - Apr 2002

Bibliographical note

Funding Information:
Manuscript received July 23, 2001; revised October 23, 2001. This work was supported by the National Research Laboratory (NRL) Project, Ministry of Science and Technology, and the Brain Korea 21 (BK21). H. Lee is with the School of Electrical Engineering, Kookmin University, Seoul 136-702, Korea (e-mail: [email protected]). J.-H. Lee is with the School of Electrical Engineering, Kyungpook National University, Daegu 702-701, Korea. H. Shin is with the Department of Information Electronics, Ewha Womans University, Seoul 120-720, Korea. Y.-J. Park is with the School of Electrical Engineering and Computer Science and ISRC, Seoul National University, Seoul 151-742, Korea. H. S. Min is with the School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea. Publisher Item Identifier S 0018-9383(02)03039-3.

Keywords

Analog
Bulk silicon
Charge-pumping method
Degradation
Interface state
MOSFETs
Matching
Mobility
Narrow width
Noise
Partially depleted
Radio frequency (RF)
Shallow trench isolation (STI)
Silicon-on-insulator (SOI)
Stress

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10.1109/16.992869

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title = "An anomalous device degradation of SOI narrow width devices caused by STI edge influence",

abstract = "The effects of shallow trench isolation (STI) on silicon-on-insulator (SOI) devices are investigated for various device sizes with three different gate shapes. Both NMOSFETs and PMOSFETs with the channel region butted to the STI show the reduction of mobility (NMOSFETs and PMOSFETs) and the increase of low-frequency noise as the channel width is reduced. In comparison, the devices without the STI-butted channel region show much less variation in mobility for various channel width. The degradation of MOSFETs' yield in SOI MOSFETs with the STI is found to be dependent on the device width since the contribution of the interface roughness (or damage) between the STI and the channel formed during the dry etch process becomes significant with the decrease of channel width and the increase of channel length. From the charge-pumping results, the interface state (Nit) generated by the STI process was identified as the cause of the anomalous degradation.",

keywords = "Analog, Bulk silicon, Charge-pumping method, Degradation, Interface state, MOSFETs, Matching, Mobility, Narrow width, Noise, Partially depleted, Radio frequency (RF), Shallow trench isolation (STI), Silicon-on-insulator (SOI), Stress",

author = "Hyeokjae Lee and Lee, {Jong Ho} and Hyungsoon Shin and Park, {Young June} and Min, {Hong Shick}",

note = "Funding Information: Manuscript received July 23, 2001; revised October 23, 2001. This work was supported by the National Research Laboratory (NRL) Project, Ministry of Science and Technology, and the Brain Korea 21 (BK21). H. Lee is with the School of Electrical Engineering, Kookmin University, Seoul 136-702, Korea (e-mail: [email protected]). J.-H. Lee is with the School of Electrical Engineering, Kyungpook National University, Daegu 702-701, Korea. H. Shin is with the Department of Information Electronics, Ewha Womans University, Seoul 120-720, Korea. Y.-J. Park is with the School of Electrical Engineering and Computer Science and ISRC, Seoul National University, Seoul 151-742, Korea. H. S. Min is with the School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea. Publisher Item Identifier S 0018-9383(02)03039-3.",

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AU - Lee, Hyeokjae

AU - Lee, Jong Ho

AU - Shin, Hyungsoon

AU - Park, Young June

AU - Min, Hong Shick

N1 - Funding Information: Manuscript received July 23, 2001; revised October 23, 2001. This work was supported by the National Research Laboratory (NRL) Project, Ministry of Science and Technology, and the Brain Korea 21 (BK21). H. Lee is with the School of Electrical Engineering, Kookmin University, Seoul 136-702, Korea (e-mail: [email protected]). J.-H. Lee is with the School of Electrical Engineering, Kyungpook National University, Daegu 702-701, Korea. H. Shin is with the Department of Information Electronics, Ewha Womans University, Seoul 120-720, Korea. Y.-J. Park is with the School of Electrical Engineering and Computer Science and ISRC, Seoul National University, Seoul 151-742, Korea. H. S. Min is with the School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea. Publisher Item Identifier S 0018-9383(02)03039-3.

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N2 - The effects of shallow trench isolation (STI) on silicon-on-insulator (SOI) devices are investigated for various device sizes with three different gate shapes. Both NMOSFETs and PMOSFETs with the channel region butted to the STI show the reduction of mobility (NMOSFETs and PMOSFETs) and the increase of low-frequency noise as the channel width is reduced. In comparison, the devices without the STI-butted channel region show much less variation in mobility for various channel width. The degradation of MOSFETs' yield in SOI MOSFETs with the STI is found to be dependent on the device width since the contribution of the interface roughness (or damage) between the STI and the channel formed during the dry etch process becomes significant with the decrease of channel width and the increase of channel length. From the charge-pumping results, the interface state (Nit) generated by the STI process was identified as the cause of the anomalous degradation.

AB - The effects of shallow trench isolation (STI) on silicon-on-insulator (SOI) devices are investigated for various device sizes with three different gate shapes. Both NMOSFETs and PMOSFETs with the channel region butted to the STI show the reduction of mobility (NMOSFETs and PMOSFETs) and the increase of low-frequency noise as the channel width is reduced. In comparison, the devices without the STI-butted channel region show much less variation in mobility for various channel width. The degradation of MOSFETs' yield in SOI MOSFETs with the STI is found to be dependent on the device width since the contribution of the interface roughness (or damage) between the STI and the channel formed during the dry etch process becomes significant with the decrease of channel width and the increase of channel length. From the charge-pumping results, the interface state (Nit) generated by the STI process was identified as the cause of the anomalous degradation.

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KW - Noise

KW - Partially depleted

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KW - Stress

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

An anomalous device degradation of SOI narrow width devices caused by STI edge influence

Abstract

Bibliographical note

Keywords

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