An analytical hot-carrier degradation model for LDD NMOSFETs

Jung Suk Goo; Young Gwan Kim; Hyeokjae L'Yee; Ho Yup Kwon; Hyungsoon Shin

An analytical hot-carrier degradation model for LDD NMOSFETs

Jung Suk Goo, Young Gwan Kim, Hyeokjae L'Yee, Ho Yup Kwon, Hyungsoon Shin

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	European Solid-State Device Research Conference
Editors	Peter Ashburn, Chris Hill
Publisher	IEEE Computer Society
Pages	425-428
Number of pages	4
ISBN (Electronic)	2863321579
State	Published - 1994
Event	24th European Solid State Device Research Conference, ESSDERC 1994 - Edinburgh, United Kingdom Duration: 11 Sep 1994 → 15 Sep 1994

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	24th European Solid State Device Research Conference, ESSDERC 1994
Country/Territory	United Kingdom
City	Edinburgh
Period	11/09/94 → 15/09/94

Cite this

@inproceedings{eea54d56a0b84b8c92fdb3b7d286f636,

title = "An analytical hot-carrier degradation model for LDD NMOSFETs",

author = "Goo, {Jung Suk} and Kim, {Young Gwan} and Hyeokjae L'Yee and Kwon, {Ho Yup} and Hyungsoon Shin",

year = "1994",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "425--428",

editor = "Peter Ashburn and Chris Hill",

booktitle = "European Solid-State Device Research Conference",

note = "24th European Solid State Device Research Conference, ESSDERC 1994 ; Conference date: 11-09-1994 Through 15-09-1994",

}

Goo, JS, Kim, YG, L'Yee, H, Kwon, HY & Shin, H 1994, An analytical hot-carrier degradation model for LDD NMOSFETs. in P Ashburn & C Hill (eds), European Solid-State Device Research Conference., 5435751, European Solid-State Device Research Conference, IEEE Computer Society, pp. 425-428, 24th European Solid State Device Research Conference, ESSDERC 1994, Edinburgh, United Kingdom, 11/09/94.

An analytical hot-carrier degradation model for LDD NMOSFETs. / Goo, Jung Suk; Kim, Young Gwan; L'Yee, Hyeokjae et al.
European Solid-State Device Research Conference. ed. / Peter Ashburn; Chris Hill. IEEE Computer Society, 1994. p. 425-428 5435751 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - An analytical hot-carrier degradation model for LDD NMOSFETs

AU - Goo, Jung Suk

AU - Kim, Young Gwan

AU - L'Yee, Hyeokjae

AU - Kwon, Ho Yup

AU - Shin, Hyungsoon

PY - 1994

Y1 - 1994

UR - http://www.scopus.com/inward/record.url?scp=84907689965&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84907689965

T3 - European Solid-State Device Research Conference

SP - 425

EP - 428

BT - European Solid-State Device Research Conference

A2 - Ashburn, Peter

A2 - Hill, Chris

PB - IEEE Computer Society

T2 - 24th European Solid State Device Research Conference, ESSDERC 1994

Y2 - 11 September 1994 through 15 September 1994

ER -